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16 March 2023 First-principles study of planar defects in gallium oxide (Conference Presentation)
Mengen Wang
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC1242202 (2023) https://doi.org/10.1117/12.2659009
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Monoclinic gallium oxide is a wide-bandgap (4.8 eV) semiconductor with a high breakdown field. To fully exploit the application in high power electronics, it is important to understand how the growth of gallium oxide affect the formation of planar defects. We use density functional theory calculations to explore the energetics and electronic structures of the planar defects including twin boundaries on the (001), (100), and (-102) planes and staking faults on the (001), (100), and (010) planes. We will also discuss the formation mechanism and how the choice of the growth surface can affect the formation of these planar defects. Work performed in collaboration with Sai Mu and Chris G. Van de Walle and supported by AFOSR.
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Mengen Wang "First-principles study of planar defects in gallium oxide (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC1242202 (16 March 2023); https://doi.org/10.1117/12.2659009
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KEYWORDS
Gallium
Oxides
Electronics
Semiconductors
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