Probing EUV resist defect detectability using a SEM simulation framework

Thomas I. Wallow; Aiqin Jiang; Ton Kiers; Tim Houben; Chris Spence

doi:10.1117/12.2687837

22 November 2023 Probing EUV resist defect detectability using a SEM simulation framework

Thomas I. Wallow, Aiqin Jiang, Ton Kiers, Tim Houben, Chris Spence

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC127500C (2023) https://doi.org/10.1117/12.2687837
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

In this presentation, we present a set of methods for evaluating detectability of EUV resist defects using a SEM simulation framework based on the Nebula SEM simulator developed at Delft University. The full framework allows pattern generation and perturbation, SEM simulation, defect detection, and dispositioning and analysis to be integrated in an automated flow. We use this flow to examine the limits of defect detectability in EUV-relevant pattern geometries. We present ways in which the framework can be used to evaluate different defect detection and inspection strategies. As examples, we will present comparisons between typical contour-based methods, die-to-die and die-to-database methods, and machine learning approaches. This framework provides insights into expected on-wafer SEM defect detection capabilities by providing explicit simulation-based linkages between defect geometries and SEM responses.

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Citation Download Citation

Thomas I. Wallow, Aiqin Jiang, Ton Kiers, Tim Houben, and Chris Spence "Probing EUV resist defect detectability using a SEM simulation framework", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC127500C (22 November 2023); https://doi.org/10.1117/12.2687837

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KEYWORDS

Scanning electron microscopy

Defect detection

Extreme ultraviolet

Inspection

Machine learning

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