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9 March 2024 Nano-cathodoluminescence of GaN based power-devices
Gordon Schmidt, Frank Bertram, Jürgen Christen
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860M (2024) https://doi.org/10.1117/12.3000517
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The development of group-III nitride materials has started a new era of GaN-based high-power devices, which have achieved a remarkable progress since then. However, the current large gap between theoretical performance predictions based on material properties and device physics on one side and practically achievable device figures of merit on the other requires a deeper understanding of the complex heterostructures, their inherent electrical fields, doping properties, interface quality and crystal defects. In this study, we will present the nano-scale correlation of structural, electronic and optical properties of a GaN-based lateral p-n+ superjunction and the two-dimensional electron gas (2DEG) of a lateral AlGaN/GaN field-effect transistor by cathodoluminescence directly performed in a scanning transmission electron microscope.
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Gordon Schmidt, Frank Bertram, and Jürgen Christen "Nano-cathodoluminescence of GaN based power-devices", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860M (9 March 2024); https://doi.org/10.1117/12.3000517
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KEYWORDS
Gallium nitride
Excitons
Luminescence
Scanning electron microscopy
Silicon
Scanning transmission electron microscopy
Semiconductors
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