Progress in UV-C laser diode development

Maki Kushimoto

doi:10.1117/12.3000430

9 March 2024 Progress in UV-C laser diode development

Maki Kushimoto

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860P (2024) https://doi.org/10.1117/12.3000430
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

AlGaN-based UV-C laser diodes (LDs) are expected to be applied to various applications as a low-cost, environmentally friendly, and highly efficient laser light source. Although it has been difficult to realize DUV LDs due to problems with AlGaN crystals, we have achieved pulsed lasing at room temperature (R.T.) by improving crystal quality and demonstrating hole injection technology based on polarized doping technology. Furthermore, by suppressing process-induced dislocations and improving optical confinement, the threshold gain and drive voltage were improved, and continuous-wave lasing of a UV-C laser at R.T. with a threshold current density of 4.2 kA/cm2 and a threshold voltage of 8.7 V was successfully achieved.

Conference Presentation

Citation Download Citation

Maki Kushimoto "Progress in UV-C laser diode development", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860P (9 March 2024); https://doi.org/10.1117/12.3000430

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