Dilute nitride based sensing on 200mm GaAs & GaAs-Ge templates

Andrew Clark; Kalyan Nunna; Mark J. Furlong; Rodney Pelzel

doi:10.1117/12.3013944

13 March 2024 Dilute nitride based sensing on 200mm GaAs & GaAs-Ge templates

Andrew Clark, Kalyan Nunna, Mark J. Furlong, Rodney Pelzel

Author Affiliations +

Proceedings Volume PC12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; PC129040A (2024) https://doi.org/10.1117/12.3013944
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Sensing in the critical 1100-1400nm spectral region is well served by VCSELs and photodetector utilizing dilute nitride (DN) materials grown on GaAs substrates. For CMOS compatibility the growth of DN materials on 200mm Ge wafers has also been demonstrated. The DN VCSEL structure can also be grown using MOCVD for the DBR which gives the ideal mix of performance and high-volume throughput. The successful growth of equivalent performance DN materials by MOCVD has been achieved for photodetector, work on VCSEL is ongoing.

Conference Presentation

Citation Download Citation

Andrew Clark, Kalyan Nunna, Mark J. Furlong, and Rodney Pelzel "Dilute nitride based sensing on 200mm GaAs & GaAs-Ge templates", Proc. SPIE PC12904, Vertical-Cavity Surface-Emitting Lasers XXVIII, PC129040A (13 March 2024); https://doi.org/10.1117/12.3013944

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