Advancements in semiconductor materials, particularly within Group IV, are crucial to meet the demand for efficient and adaptable laser sources. Germanium-tin (GeSn) alloys have emerged as promising candidates, facilitating full monolithic integration into silicon photonics. Progress in optically pumped GeSn lasers is remarkable, but electrically injected ones face challenges due to low index contrast to effectively confine the optical mode. We propose an electrically pumped laser design based on GeSnOI (GeSn On Insulator) scheme. Modal analysis was performed at 2500 nm wavelength using finite element method, optimizing electromagnetic wave confinement, and mitigating direct electrical contact deposition on the active zone. Simulation results indicated that the most effective fabrication approach involves bonding with another silicon substrate using SiN dielectric layer as cladding, thus taking advantage of high optical index contrast. This advancement heralds the potential for room temperature operation of electrically pumped lasers.
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