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Phase Shift Mask (PSM) has been widely investigated in order to improve EUV patterning capability. In this work, rigorous simulation has been employed to identify the cause of the best focus shift shown in PSM and several strategies to find a solution to enable co-patterning of various pitch patterns are suggested. This paper also presents the effect of the sub-resolution assist feature as a method to mitigate the effect of 3D mask in PSM and how PSM helps to improve CD uniformity for various pitch contact array compared to BIN.
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Eun Sung Kim, Sejin Park, Hyungkwan Park, Jaemyoung Lee, Sung Gon Jung, "Understanding best focus shift on logic contact patterning in EUV attenuated phase-shift mask," Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150I (13 November 2024); https://doi.org/10.1117/12.3034344