Presentation
13 November 2024 Understanding best focus shift on logic contact patterning in EUV attenuated phase-shift mask
Eun Sung Kim, Sejin Park, Hyungkwan Park, Jaemyoung Lee, Sung Gon Jung
Author Affiliations +
Abstract
Phase Shift Mask (PSM) has been widely investigated in order to improve EUV patterning capability. In this work, rigorous simulation has been employed to identify the cause of the best focus shift shown in PSM and several strategies to find a solution to enable co-patterning of various pitch patterns are suggested. This paper also presents the effect of the sub-resolution assist feature as a method to mitigate the effect of 3D mask in PSM and how PSM helps to improve CD uniformity for various pitch contact array compared to BIN.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eun Sung Kim, Sejin Park, Hyungkwan Park, Jaemyoung Lee, and Sung Gon Jung "Understanding best focus shift on logic contact patterning in EUV attenuated phase-shift mask", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150I (13 November 2024); https://doi.org/10.1117/12.3034344
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KEYWORDS
3D mask effects

Extreme ultraviolet

Optical lithography

Attenuation

Logic

Semiconducting wafers

Binary data

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