Enacting atomic layer deposition, 1999-2001

doi:10.1117/3.2572061.ch27

Book: Fortunes of High-Tech: a History of Innovation at ASM International

Author(s): Jorijn van Duijn

Published: 2019

https://doi.org/10.1117/3.2572061.ch27

Abstract

This chapter, covering the years 1999 until 2001, will situate the development of the new gate stack in a complex and rather mature infrastructure of governmentally and industrial collaborative efforts. ASM capitalized on this infrastructure as it tried to enact a newly acquired deposition technique and its lately conceived contribution for gate stack technology. Moreover, a new technology – named atomic layer deposition – and its applicability for high-k gate dielectrics enjoyed the particular interest of leading chip manufacturers across the world. From 1999 onward, the innovation of atomic layer deposition furthered the preceding ambitions into RTP and integrated processes.