Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Chijioke I. Oriaku; Timothy J. Spencer; Xu Yang; Jorge P. Zubelli; Mauro F. Pereira

doi:10.1117/1.JNP.11.026005

3 May 2017 Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Chijioke I. Oriaku, Timothy J. Spencer, Xu Yang, Jorge P. Zubelli, Mauro F. Pereira

Author Affiliations +

Funded by: European Cooperation in Science and Technology (COST), UK Engineering and Physical Sciences Research Council (EPSRC)

Journal of Nanophotonics, Vol. 11, Issue 2, 026005 (May 2017). https://doi.org/10.1117/1.JNP.11.026005

Abstract

We calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation, and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5 μm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization, and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

Citation Download Citation

Chijioke I. Oriaku, Timothy J. Spencer, Xu Yang, Jorge P. Zubelli, and Mauro F. Pereira "Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors," Journal of Nanophotonics 11(2), 026005 (3 May 2017). https://doi.org/10.1117/1.JNP.11.026005

Received: 5 February 2017; Accepted: 29 March 2017; Published: 3 May 2017

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