Performance of hetero junction with intrinsic thin-layer solar cell depending upon contact resistivity of front electrode

Youngseok Lee; Sangmyeong Han; Sunbo Kim; Sk Md Iftiquar; Youn-Jung Lee; Jinsu Yoo; Vinh Ai Dao; Junsin Yi

doi:10.1117/1.JPE.4.043094

26 May 2014 Performance of hetero junction with intrinsic thin-layer solar cell depending upon contact resistivity of front electrode

Youngseok Lee, Sangmyeong Han, Sunbo Kim, Sk Md Iftiquar, Youn-Jung Lee, Jinsu Yoo, Vinh Ai Dao, Junsin Yi

Author Affiliations +

Funded by: Human Resources Development program

Journal of Photonics for Energy, Vol. 4, Issue 1, 043094 (May 2014). https://doi.org/10.1117/1.JPE.4.043094

Abstract

Low temperature curing of Ag paste for electrode formation in silicon hetero junction (SHJ) solar cells is important for providing better device characteristics. Ag paste is composed of solvent, various organic materials, and additives; hence its electrical and mechanical adhesion properties depend on the curing conditions. The adhesion of the Ag paste was determined by scratch test, whereas the specific contact resistance was measured using the transfer length method. Various Ag electrodes were formed at various curing temperatures within the temperature range of 160°C–240°C, at 20°C intervals. The curing time was also varied for another set of Ag electrodes. With 200°C temperature and for 20-min curing, the critical load of 20.06 N and specific contact resistance of 19.61 mΩ⋅cm 2 were observed. Using the same conditions, the efficiency of the SHJ solar cell was found to be improved by 3.8%.

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Youngseok Lee, Sangmyeong Han, Sunbo Kim, Sk Md Iftiquar, Youn-Jung Lee, Jinsu Yoo, Vinh Ai Dao, and Junsin Yi "Performance of hetero junction with intrinsic thin-layer solar cell depending upon contact resistivity of front electrode," Journal of Photonics for Energy 4(1), 043094 (26 May 2014). https://doi.org/10.1117/1.JPE.4.043094

Published: 26 May 2014

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