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15 February 2016 Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks
Zhengqing J. Qi, Jed H. Rankin, Eisuke Narita, Masayuki Kagawac
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 2, 029801 (February 2016). https://doi.org/10.1117/1.JMM.15.2.029801

This article [J. Micro/Nanolith. MEMS MOEMS 15(2), 021005 (2016)] was originally published online on 2 February 2016 with an error in the author affiliations.

The correct affiliations are shown above.

All online versions of the article were corrected on 3 February 2016. The article appears correctly in print.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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Zhengqing J. Qi, Jed H. Rankin, Eisuke Narita, and Masayuki Kagawac "Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 029801 (15 February 2016). https://doi.org/10.1117/1.JMM.15.2.029801
Published: 15 February 2016
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KEYWORDS
Photomasks
Extreme ultraviolet lithography
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