Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography

Xiaodong Yuan; Jinping Chen; Tianjun Yu; Yi Zeng; Xudong Guo; Shuangqing Wang; Rui Hu; Peng Tian; Michaela Vockenhuber; Dimitrios Kazazis; Yasin Ekinci; Jun Zhao; Yanqing Wu; Guoqiang Yang; Yi Li

doi:10.1117/1.JMM.23.3.034601

11 July 2024 Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography

Xiaodong Yuan, Jinping Chen, Tianjun Yu, Yi Zeng, Xudong Guo, Shuangqing Wang, Rui Hu, Peng Tian, Michaela Vockenhuber, Dimitrios Kazazis, Yasin Ekinci, Jun Zhao, Yanqing Wu, Guoqiang Yang, Yi Li

Author Affiliations +

Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 23, Issue 3, 034601 (July 2024). https://doi.org/10.1117/1.JMM.23.3.034601

Abstract

Background

Traditional chemically amplified resists (CARs) often suffer from high line-edge roughness (LER), primarily due to acid diffusion and the uneven distribution of reactive components. Nonchemically amplified resists (n-CARs) emerge as a promising solution to overcome the limitations. Molecular glasses (MGs), a type of organic compounds known for their distinct and well-defined structures, are particularly noteworthy for their homogeneity. The innovative design of MG-based n-CARs represents a significant stride toward overcoming the limitations inherent in CAR systems.

Aim

Development and performance evaluation of n-CARs utilizing the multi-sulfonium modified triptycene molecule for advanced lithography techniques, such as electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL).

Approach

A multi-sulfonium modified triptycene (TPESF6) was synthesized and characterized. This compound undergoes a photochemical reaction in which the sulfonium groups are transformed into thioethers, resulting in a substantial switch in polarity and thereby in solubility. The lithography performance of the TPESF6 resist was evaluated by EBL and EUVL. The lithographic patterns were analyzed by scanning electron microscopy and atomic force microscopy.

Results

TPESF6 resist demonstrated remarkable performance in EBL, achieving a 20 nm line/space (L/S) patterns as a negative-tone resist developed by water. Further evaluations using EUVL yielded an impressive 13 nm L/S pattern at a dose of 372.6 mJ/cm2 with a very low LER of 1.8 nm. Mechanistic studies show that the change in solubility of TPESF6 resist depends on the decomposition of the sulfonium cation and triflate anion groups.

Conclusions

The TPESF6 molecular resist shows high resolution and low LER, as evidenced by tests conducted using both EBL and EUVL. The integration of MG resist characteristics with the concept of n-CARs significantly improves the resolution and reduces the LER, offering a promising pathway for high-performance materials for advanced lithography.

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Xiaodong Yuan, Jinping Chen, Tianjun Yu, Yi Zeng, Xudong Guo, Shuangqing Wang, Rui Hu, Peng Tian, Michaela Vockenhuber, Dimitrios Kazazis, Yasin Ekinci, Jun Zhao, Yanqing Wu, Guoqiang Yang, and Yi Li "Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography," Journal of Micro/Nanopatterning, Materials, and Metrology 23(3), 034601 (11 July 2024). https://doi.org/10.1117/1.JMM.23.3.034601

Received: 17 April 2024; Accepted: 3 June 2024; Published: 11 July 2024

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KEYWORDS

Extreme ultraviolet lithography

Electron beam lithography

Lithography

Film thickness

Line edge roughness

Etching

Scanning electron microscopy

Background

Aim

Approach

Results

Conclusions

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