Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

Bruno Viana; Oleg Lupan; Thierry Pauporté

doi:10.1117/1.3604783

1 January 2011 Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

Bruno Viana, Oleg Lupan, Thierry Pauporté

Author Affiliations +

Journal of Nanophotonics, Vol. 5, Issue 1, 051816 (January 2011). https://doi.org/10.1117/1.3604783

Abstract

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

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Bruno Viana, Oleg Lupan, and Thierry Pauporté "Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes," Journal of Nanophotonics 5(1), 051816 (1 January 2011). https://doi.org/10.1117/1.3604783

Published: 1 January 2011

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