Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays

Bor-Yeu Tsaur; Chenson K. Chen; Susanne A. Paul

doi:10.1117/12.151535

1 January 1994 Heterojunction Ge_xSi_1-x/Si infrared detectors and focal plane arrays

Bor-Yeu Tsaur, Chenson K. Chen, Susanne A. Paul

Author Affiliations +

Optical Engineering, Vol. 33, Issue 1, (January 1994). https://doi.org/10.1117/12.151535

Abstract

Heterojunction Ge_xSi_1-x/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped Ge_xSi_1-x heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 μm, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x 244- and 400- x 400-element focal plane arrays consisting of Ge_xSi_1-x/Si detectors with cutoff wavelength of ~10 μm and monolithic CCD readout circuitry.

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Bor-Yeu Tsaur, Chenson K. Chen, and Susanne A. Paul "Heterojunction Ge_xSi_1-x/Si infrared detectors and focal plane arrays," Optical Engineering 33(1), (1 January 1994). https://doi.org/10.1117/12.151535

Published: 1 January 1994

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