Open Access
18 January 2023 Epitaxial quantum dots: a semiconductor launchpad for photonic quantum technologies
Author Affiliations +
Abstract

Epitaxial quantum dots formed by III–V compound semiconductors are excellent sources of non-classical photons, creating single photons and entangled multi-photon states on demand. Their semiconductor nature allows for a straightforward combination with mature integrated photonic technologies, leading to novel functional devices at the single-photon level. Integrating a quantum dot into a carefully engineered photonic cavity enables control of the radiative decay rate using the Purcell effect and the realization of photon–photon nonlinear gates. In this review, we introduce the basis of epitaxial quantum dots and discuss their applications as non-classical light sources. We highlight two interfaces—one between flying photons and the quantum-dot dipole, and the other between the photons and the spin. We summarize the recent development of integrated photonics and reconfigurable devices that have been combined with quantum dots or are suitable for hybrid integration. Finally, we provide an outlook of employing quantum-dot platforms for practical applications in large-scale quantum computation and the quantum Internet.

CC BY: © The Authors. Published by CLP and SPIE under a Creative Commons Attribution 4.0 International License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Xiaoyan Zhou, Liang Zhai, and Jin Liu "Epitaxial quantum dots: a semiconductor launchpad for photonic quantum technologies," Photonics Insights 1(2), R07 (18 January 2023). https://doi.org/10.3788/PI.2022.R07
Received: 30 September 2022; Accepted: 1 December 2022; Published: 18 January 2023
Lens.org Logo
CITATIONS
Cited by 15 scholarly publications.
Advertisement
Advertisement
KEYWORDS
Quantum dots

Photons

Quantum spin

Semiconductor quantum dots

Waveguides

Quantum switching

Quantum entanglement

Back to Top