GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs ~10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.
GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.
A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by Jth = 1.76 kA/cm2 (green) and 2.94kA/cm2 (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz.
Nitride based GaN and InGaN quantum dots are excellent single-photon emitters at high temperature owing to their wide bandgap and large exciton binding energy [1-5]. In this work, two different molecular beam epitaxy (MBE) grown nanostructures have been investigated for single-photon emission: InGaN/GaN disk-in-nanowire and InGaN/GaN self-organized quantum dot. Single-photon emission under both optical and electrical excitation has been observed from a single InGaN quantum contained in a GaN nanowire p-n junction. We demonstrate electrically driven single-photon emission, with a g (2)(0) = 0.35, from a single InGaN quantum dot emitting in the green spectral range (λ=520 nm) up to 125 K. Additionally, a self-organized InGaN/GaN single quantum dot diode was grown and fabricated. Emission from a single quantum dot (λ=620 nm) shows single-photon emission with g(2)(0) = 0.29 at room temperature. On-demand single-photon emission by electrical pumping of the quantum dot at an excitation repetition rate of 200 MHz was demonstrated.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.