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Abdur-Rehman Anwar
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Publications (4)
SPIE Journal Paper | 4 March 2021
Hole transport enhancement by thickness- and composition-grading of electron blocking layer
OE, Vol. 60, Issue 03, 036101, (March 2021) https://doi.org/10.1117/12.10.1117/1.OE.60.3.036101
KEYWORDS: Electron beam lithography, Light emitting diodes, Quantum wells, Electron transport, Gallium nitride, Indium gallium nitride, Optical engineering, Interfaces, Polarization, Internal quantum efficiency
Proceedings Article | 27 August 2020 Paper
Analytical analysis of piezoelectric field on the optoelectronic characteristics of green GaN-based light-emitting diodes
Proceedings Volume 11561, 1156102 (2020) https://doi.org/10.1117/12.2574352
KEYWORDS: Light emitting diodes, Quantum wells, Internal quantum efficiency, Indium gallium nitride
Proceedings Article | 20 August 2020 Presentation + Paper
Enhancement of internal quantum efficiency of green GaN-based light-emitting diodes by employing graded well/barrier/electron blocking layer
Proceedings Volume 11498, 1149806 (2020) https://doi.org/10.1117/12.2568457
KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Internal quantum efficiency
SPIE Journal Paper | 16 June 2020
Internal quantum efficiency enhancement employing composition-graded last quantum barrier and electron blocking layer
JPE, Vol. 10, Issue 02, 024505, (June 2020) https://doi.org/10.1117/12.10.1117/1.JPE.10.024505
KEYWORDS: Organic light emitting diodes, Electron beam lithography, Gallium, Light emitting diodes, Internal quantum efficiency, Quantum wells, Indium gallium nitride, Quantum efficiency, Gallium nitride, Indium
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