Laser beam scanners are of strong interest, as they offer a compact and low-power consumption solution for head-worn AR-displays and, more in general, for efficient and focus-free projection displays. In this framework, EXALOS has been leading the research and development of active light sources, focusing on optimizing red, green, and blue edge-emitting devices, including superluminescent diodes (SLEDs) and laser diodes (LDs). This work provides an overview of the performance achieved by single-emitter SLEDs and low-threshold LDs based on GaN, as well as AlGaInP, III-V semiconductors. Furthermore, we report on the development of emitter arrays. In particular, narrow-pitch devices with an emitter-to-emitter spacing of 10 μm and also a novel device design featuring both anodes and cathodes on the top chip surface are reported. The individual cathodes are fully independent and electrically insulated, ensuring an emitter-to-emitter resistance close to 1MOhm. Compared to conventional arrays with common cathode, the new architecture allows for integration with industry-standard current-sink drivers for efficient multi-LD modulation.
An n-type InAlN cladding design based on multiple GaN/InAlN pairs is successfully implemented in edge-emitting laser diodes (LDs) and superluminescent light emitting diodes (SLEDs) emitting in the blue and green spectral range. Thanks to the stronger refractive index contrast with respect to waveguiding layers enabled by this approach, larger optical confinement factors are obtained. The resulting larger modal gains translate into remarkable performance improvements for LD and SLEDs with respect to conventional AlGaN based claddings. LDs with threshold currents as low as 3 mA in the blue and 12 mA in the green spectral range are demonstrated. Similarly, an operating current decrease of >100 mA is reported for state-of-the-art green SLEDs.
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