Dr. Alan D. Brodie Profile

Dr. Alan D. Brodie

Principal Engineer at KLA Corp

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 30 April 2023 Presentation

A total shift show: submilliradian tilt goniometry in scanning electron microscopy

Andrew Madison, John Villarrubia, Daron Westly, Ronald Dixson, Craig Copeland, John Gerling, Katherine Cochrane, Alan Brodie, Lawrence Muray, J. Alexander Liddle, Samuel Stavis

Proceedings Volume 12496, 1249606 (2023) https://doi.org/10.1117/12.2673963

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SPIE Journal Paper | 22 November 2021 Open Access

Special Section Guest Editorial: Masks and Lithography in the Era of Multi-beam Mask Writers

Alan Brodie, Martha Sanchez

JM3, Vol. 20, Issue 04, 041401, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041401

KEYWORDS: Photomasks, Lithography, Extreme ultraviolet, Semiconducting wafers, Printing, Line edge roughness, High volume manufacturing

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Proceedings Article | 28 March 2014 Paper

REBL DPG lenslet structure: design for charging prevention

Shy-Jay Lin, T. Bao, C. Lu, S.-C. Wang, T. C. Chien, J.-J. Shin, Burn Lin, Mark McCord, Alan Brodie, Allen Carroll, Luca Grella

Proceedings Volume 9049, 90491X (2014) https://doi.org/10.1117/12.2045416

KEYWORDS: Dielectrics, Electrodes, Electron beam lithography, Microelectromechanical systems, Atomic layer deposition, Lens design, Structural design, Coating, Reflectivity, Electron beams

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SPIE Journal Paper | 5 August 2013 Open Access

Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

Luca Grella, Allen Carroll, Kirk Murray, Mark McCord, William Tong, Alan Brodie, Thomas Gubiotti, Fuge Sun, Francoise Kidwingira, Shinichi Kojima, Paul Petric, Christopher Bevis, Bart Vereecke, Luc Haspeslagh, Anil Mane, Jeffrey Elam

JM3, Vol. 12, Issue 03, 031107, (August 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.3.031107

KEYWORDS: Electrodes, Mirrors, Microelectromechanical systems, Semiconducting wafers, Tin, Electron beam lithography, Metals, Aluminum, Coating, Reflectivity

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Proceedings Article | 26 March 2013 Paper

Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

Thomas Gubiotti, Jeff Fuge Sun, Regina Freed, Francoise Kidwingira, Jason Yang, Chris Bevis, Allen Carroll, Alan Brodie, William Tong, Shy-Jay Lin, Wen-Chuan Wang, Luc Haspeslagh, Bart Vereecke

Proceedings Volume 8680, 86800H (2013) https://doi.org/10.1117/12.2010722

KEYWORDS: Semiconducting wafers, Electron beam lithography, Lithography, Coating, Logic, Electron beams, Polymethylmethacrylate, Printing, Reflectivity, Silica

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Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a functional DPG chip and will evaluate the current chip performance on the REBL system. Print results for line/space and device test patterns at the 100nm node will be presented.

Proceedings Article | 26 March 2013 Paper

Preliminary investigation of shot noise, dose, and focus latitude for e-beam direct write

Alan Brodie, Shinichi Kojima, Mark McCord, Luca Grella, Thomas Gubiotti, Chris Bevis

Proceedings Volume 8680, 868029 (2013) https://doi.org/10.1117/12.2011908

KEYWORDS: Electron beam lithography, Monte Carlo methods, Lithography, Line width roughness, Photomasks, Electron beams, Logic, Photoresist processing, Nanoimprint lithography, Semiconductor manufacturing

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Proceedings Article | 4 April 2011 Paper

Demonstration of lithography patterns using reflective e-beam direct write

Regina Freed, Jeff Sun, Alan Brodie, Paul Petric, Mark McCord, Kurt Ronse, Luc Haspeslagh, Bart Vereecke

Proceedings Volume 7970, 79701T (2011) https://doi.org/10.1117/12.879454

KEYWORDS: Electron beam lithography, Semiconducting wafers, Lithography, Electrodes, Mirrors, Microelectromechanical systems, Etching, Reflectivity, Electron beams, Tin

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Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

Proceedings Article | 4 April 2011 Paper

New advances with REBL for maskless high-throughput EBDW lithography

Paul Petric, Chris Bevis, Mark McCord, Allen Carroll, Alan Brodie, Upendra Ummethala, Luca Grella, Anthony Cheung, Regina Freed

Proceedings Volume 7970, 797018 (2011) https://doi.org/10.1117/12.882636

KEYWORDS: Semiconducting wafers, Mirrors, Reflectivity, Microelectromechanical systems, Magnetism, Photography, Electron beam lithography, Wafer-level optics, YAG lasers, Lithography

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Proceedings Article | 18 March 2009 Open Access

REBL nanowriter: Reflective Electron Beam Lithography

Paul Petric, Chris Bevis, Alan Brodie, Allen Carroll, Anthony Cheung, Luca Grella, Mark McCord, Henry Percy, Keith Standiford, Marek Zywno

Proceedings Volume 7271, 727107 (2009) https://doi.org/10.1117/12.817319

KEYWORDS: Semiconducting wafers, Electron beam lithography, Lithography, Electron beams, Reflectivity, Wafer-level optics, Prisms, Calibration, Electrodes, Mirrors

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SPIE Journal Paper | 1 July 2004

Low-voltage electron beam lithography resist processes: top surface imaging and hydrogen silisesquioxane bilayer

Andrew Jamieson, C. Willson, Yautzong Hsu, Alan Brodie

JM3, Vol. 3, Issue 03, (July 2004) https://doi.org/10.1117/12.10.1117/1.1758268

KEYWORDS: Line edge roughness, Electron beam lithography, Electron beams, Photoresist processing, Image processing, Imaging systems, Hydrogen, Etching, Polymers, Photomasks

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Proceedings Article | 24 July 2002 Paper

Hydrogen silsesquioxane bilayer resist process for low-voltage electron beam lithography

Andrew Jamieson, C. Grant Willson, Yautzong Hsu, Alan Brodie

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474194

KEYWORDS: Etching, Electron beams, Monte Carlo methods, Photoresist processing, Hydrogen, Imaging systems, Electron beam lithography, Photomasks, Oxygen, Reactive ion etching

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Proceedings Article | 21 July 2000 Paper

High-throughput NGL electron-beam direct-write lithography system

N. William Parker, Alan Brodie, John McCoy

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390042

KEYWORDS: Semiconducting wafers, Photomasks, Electron beam direct write lithography, Lithography, Microfabrication, Charged-particle lithography, Extreme ultraviolet lithography, Electron beam lithography, Charged particle optics, Electron beams

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Proceedings Article | 22 May 1995 Paper

Characterization of a new automated electron-beam wafer inspection system

Douglas Hendricks, Jack Jau, Hans Dohse, Alan Brodie, William Meisburger

Proceedings Volume 2439, (1995) https://doi.org/10.1117/12.209200

KEYWORDS: Inspection, Semiconducting wafers, Imaging systems, Wafer inspection, Scanning electron microscopy, Optical inspection, Metals, Defect detection, Wafer-level optics, Computing systems

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Showing 5 of 13 publications

Conference Committee Involvement (11)

Novel Patterning Technologies 2025

24 February 2025 | San Jose, California, United States

Novel Patterning Technologies 2024

26 February 2024 | San Jose, California, United States

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

Novel Patterning Technologies 2021

22 February 2021 | Online Only, California, United States

Showing 5 of 11 Conference Committees

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