(Mn, Sb) doped-PZT (PMSZT) thin films have been grown on La0.5Sr0.5CoO3-(delta )/Si and La0.5Sr0.5CoO3- (delta )/LaAlO3 substrates for pyroelectric detector arrays. The La0.5Sr0.5CoO3(delta ) thin films, acting as a bottom electrode and as an atomic template for epitaxial growth of PMSZT, were deposited below 550 degrees Celsius thus allowing for integration with silicon technology. The epitaxial PMSZT thin films was designed to achieve high infrared responsivity using (100) oriented LSCO electrodes. The Ni-Cr/PMSZT/LSCO/Si capacitor-like structures show good ferroelectric properties with a large remnant polarization Pr of 40 (mu) C/cm2, a spontaneous polarization Ps of 74 (mu) C/cm2, and a coercive field Ec of 115 kV/cm under an electric field of 650 kV/cm. The PMSZT films have an electrical field breakdown strength in excess of 467 kV/cm, which is much higher than the coercive field. Voltage responsivity Rv of 4062 V/W at 2 Hz and current responsivity Ri of 281 (mu) A/W at 25 Hz was achieved under black body illumination. With CO2 laser illumination at a wavelength equals 10.6 micrometer, an Rv of 4140 V/W at 2 Hz and an Ri of 441 (mu) A/W at 25 Hz was achieved.
Mn and Sb-doped Pb(Zr, Ti)O3 (PMSZT) and Nb-doped PZT (PNZT) thin film IR detectors have been integrated with Si substrates. A conducting YBCO layer in the IR detector was used as an atomic template for the epitaxial growth of the PMSZT and PNZT thin films, as well as a good IR-reflector. The epitaxial PMSZT and PNZT thin films were self-polarized and exhibited pyroelectric current even without any additional poling. The PMSZT and PNZT detectors were examined as to their pyroelectric current in response to the detector temperature. Doping with Mn and Sb into PZT and doping with Nb into PZT have been shown not only to decrease the Curie temperature Tc, but also increases pyroelectric current significantly in comparison with that of PZT thin films. The PMSZT detectors show high figures of merit, Fv of 1768 cm2/C and Fd of 0.048 (cm3/J)1/2 at 25 degrees C and Fd of 0.135 (cm3/J)1/2 at approximately 90 degrees C. The measured normalized detectivity D*, ranging from 2.5 X 108 to 6.0 X 108 cmHz1/2/W in the 2.5-19.5 micrometers wavelength band, indicated that PMSZT detectors are suitable for broad band IR detector applications. A PMSZT IR detector array with a micro-bridge for thermal isolation has also been fabricated.
A polarizer which works upon the combination effect of birefringence and diffraction has been designed and realized experimentally. According to the design the polarizer may be consisting of a sheet of birefringent material or two birefringence plates, on which surface one dimensional grooves with a sawtooth profile or echelon profile are carved. In experiment, a periodic grooves of a sawtooth profile were fabricated on the surface of calcite plate by mechanical and optical manufacture techniques. This sample polarizer was test for its polarized feature with a non-polarized HeNe laser, and the results show the polarizer is of a good polarized performance.
Uncooled infrared detectors consisting of thin film pyroelectric oxide heterostructures have been fabricated. Pb(Zr,Ti)O3 (PZT) and (Sr,Ba)Nb2O6 (BSN) thin films were integrated to YBa2Cu3O7-x (YBCO) films on yttria-stabilized zirconia (YSZ)-buffered Si(100) and on LaAlO3(100) substrates by the pulsed laser deposition technique. The YBCO thin films are used both as IR reflector- conductive electrodes and as atomic templates for PZT and BSN epitaxial growth, but not necessarily for their superconducting properties. The crystalline properties and photoresponse of the oxide thin film heterostructure infrared detectors were characterized from room temperature up to the phase transition temperatures of PZT and BSN. Detectivity values of approximately 108 cmHz1/2/W at room temperature have been obtained for simple heterostructure device configurations. The tunable phase transition temperature, dielectric constant and pyroelectric properties of the oxide allow for the development of an infrared detector with operation at temperatures higher than room temperature.
A ferroelectric-superconducting three-terminal device consisting of a YBCO base layer and a PbZrxTi1-xO3 (PZT) gate has been developed. This ferroelectric-superconductor field effect transistor has non-volatility and retention behavior based on the memory effect of the ferroelectric gate. The FSuFET was characterized both by an admittance spectroscopy and by DC I-V measurements after polarizing the PZT gate with both positive and negative pulses. The Jc modulation of the YBCO channel by the gate polarization field has been found greater than 90 percent. The retention time longer than 106 seconds has also been obtained.
Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) (001) and (Mn,Sn) doped-PZT (PMSZT) (001) thin films have been integrated to high Tc superconducting c-oriented YBa2Cu3O7-x (YBCO) films for use as infrared detectors. The films were grown on LaAlO3(100) substrates by the pulsed laser deposition technique. The photocurrent responses of the PZT/YBCO and PMSZT/YBCO heterostructures fabricated as infrared (IR) detector have been measured from room temperature up to the ferroelectric phase transition temperatures. A stable photocurrent was observed to increase with increasing temperature throughout the temperature range. It was observed that the photocurrent of PMSZT/YBCO IR detector was significantly higher than that of the PZT/YBCO IR detectors in the temperature range of 20 - 170 degree(s)C. The current enhancement with temperature was found to be strongly polarization dependent and is due to the change of the pyroelectric coefficient of the PZT and PMSZT thin films with temperature. The YBCO thin films in the heterostructure were not used for their superconducting properties, but for their IR reflector-conductive electrode properties and as an atomic template for PZT/PMSZT epitaxial growth. With the high dielectric constants of PZT (600 - 800) and PMSZT (300 - 450) measured in this work, and the stable photocurrent in the infrared region (above 1 micrometers ), the PZT/YBCO and PMSZT/YBCO heterostructures are believed to be suitable materials for use in infrared detectors applicable at temperatures higher than room temperature.
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