Meeting the CD (Critical Dimension) linearity and uniformity targets for high-NA EUV photomasks, requires tight control of a wide range of effects contributing to the distortion of the CD signature. So far, many of the factors degrading CD signature have been optimized independently, in particular the compensation of short- and long-range scattering and etch bias effects. Such independent optimization, however, limits the overall mask CD linearity and uniformity results achievable with co-optimization of the different components.
In this work, we discuss the co-optimization of short- and long-range corrections on the e-beam writer and through MPC (Mask Process Correction).
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.