Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of
two dimensional arrays of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and LN2 cryocooler.
Noise equivalent power NEP≈1×10-12 W/pixel and dynamic range 60÷70 dB at frame frequency 250 Hz.
Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of two dimensional anys of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and Split-Stirling cooler. Noise equivalent power NEP≈7•10-13 W/pixel and dynamic range 60÷70 dB at frame frequency (800÷1000) Hz.
A mathematical model of an ideal observation thermal imager (TI) is developed. At designing of model it was supposed: (1) The main noise source is a shot noise of photons irradiating a photosensitive element (PSE) of TI. (2) Temperature and reflection coefficients of objects under observation differ a little from the corresponding performances of the scence (background radiation). (3) Luminescence of the image of a local object area (LA) on a display screen of TI (useful signal) is determined by the difference between the electric charge accumulated in the canal PSE (optically conjugate with this local sites) and electric charge, accumulated in PSE canal, optically conjugated with the science. It was taken into account in the model: quantum efficiency of PSE, accumulation time in the PSE canal, the format of the array and PSE, parameters of a lens, losses in optical elements, mean temperatures and reflection (radiance) coefficients of the scene, temperatures and reflection (radiance)LA, counterradiation of the environment. Calculations (with consideration of counterradiation, angular sizes of objects, performances of objects and the scene) of utmost signal-noise ratio's; radiation noise equivalent temperature difference (NETD); radiation noise equivalent of reflection coefficients difference (NERD) for two spectral ranges: 3-5 μm and 8-14 μm. The quantitative evaluations of the influence of performances of environment on the listed above utmost parameters of TI for observation are obtained.
Electron diffraction study of PbTe and PbSnTe epitaxial layer surface and heterojunctions on their bases grown by MBE on mica was carried out. The aim of this study was determination of correlation between diffusion streaks intensity on diffraction patterns and photoelectric parameters of p-n junctions made in these structures. The diffusion streaks intensity depends on thickness and temperature of layers growing. More pronounced streaks on electron diffraction patterns are observed from thicker layers (d>1 μm) grown at higher temperatures (>300°C). Diffusion streaks intensity of heterolayers PbSnTe-PbTe grown at 380-400°C changes most heavily at changing film thickness from tenth fractions of micron till approx. 1 μm. At further increase of film thickness till approx. 4-5 μm diffusion streaks intensity changes slightly. Peak of heterojunction of Pb1-xSnxTe-PbTe (x=0.2) photosensitivity grown at 380-400°C at film thickness 0.5-1μm locates at 4.5μm with sloping decreasing till 6μm. Heterojunction with same composition grown at same temperature with film thickness 4-5μm has peak of photoresponsivity at 8.5 μm. The correlation between diffusion streaks intensity and photoelectric parameters of film p-n structures is found out.
This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb - p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384-element p+-on-n diodes formed by Be+-implantation. The diodes had a typical zero-bias resistance of 0.5 GΩ. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6÷8)10-13 W/pixel at 2•10-3 s storage time.
Pb1-x-yGexSnyTe:In thin films were made using hot wall modified method. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) nPbGeSn
In the work are studied structural, electrical and optical properties of film heterojunctions p-Pb1-xSnxTe-n- PbTe obtained by condensation of molecular beams in vacuum approximately 10-6mm mercury pressure. It is determined that diffusion fringes intensity on diffraction patterns are different depending on thickness of films (d) and temperature of films growing (Tf). The intensity of diffusion fringes also depends on survey temperature (Ts). The correlation between intensity of diffusion fringes on electron diffraction patterns and photosensitivity of heterojunctions Pb1-xSnxTe-PbTe is found.
Pb1-x-yGexSnyTe:In thin films were made using hot wall modified method is used for making of. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) nPb less than or equal to 6%, (Delta)nGe less than or equal to 23%, (Delta)nSn less than or equal to 11%. Crystalline perfection of films depends on a substrate type but their composition does not depend on it. Unlike BaF2 substrates, films grown on Si + SiO2 substrates were polycrystalline. Alternating current measurements (responsivity and current dependence on modulation frequency) showed that behavior of polycrytalline films was the same as of monocrystalline films (on BaF2). However direct current measurements (current-voltage and temperature dependence of resistance) showed results, that differ from those for monocrystalline films. The model, based on assumption about existence of traps at the polycrystal grain boundaries was proposed to explain obtained results. Concentration of electrons, captured on these traps was seemingly dependent on the background flux. This model was used to explain difference between monocrystalline and polycrystalline Pb1-x-yGexSbyTe:In thin films.
The progress of semiconductor tunable lasers allows to put the question about development of new navigation systems. For the successful solution of this problem the tunable injection lasers for red spectral region were explored and the laboratory metrology installation is designed with the high spectral resolution for measuring a laser radiation absorption in the region of wavelengths 760 nm, corresponding to rotationally oscillatory transitions in a molecule of oxygen.
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