Ms. Amandine Pikon Profile

Amandine Pikon

at Rohm and Haas Electronic Materials SAS

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Publications (6)

Proceedings Article | 11 December 2009 Paper

Advanced patterning solutions based on double exposure: double patterning and beyond

Young Bae, Yi Liu, Thomas Cardolaccia, Ken Spizuoco, Rosemary Bell, Lori Joesten, Amandine Pikon, Michael Reilly, Sheri Ablaza, Peter Trefonas, George Barclay

Proceedings Volume 7520, 75201G (2009) https://doi.org/10.1117/12.840461

KEYWORDS: Double patterning technology, Optical lithography, Photoresist processing, Image processing, Lithography, Semiconducting wafers, Chemical reactions, Coating, Control systems, Liquids

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The CD control of the first lithography (L1) patterns is a important issue in the single-etch double patterning (SEDP) process. In this process, L1 patterns are cured either chemically or thermally and then subjected to the second lithography (L2). A chemical curing process using a surface curing agent (SCA) often results in the CD growth due to the "positive" interaction between the first and second resists. A thermal curing process using a thermal cure resist (TCR) often results in the CD loss due to the volumetric shrinkage of the L1 patterns during the L2 process. By combining SCA and TCR concepts, we developed a simple "hybrid" curing system which offers precise control of the L1 CD after double patterning. This hybrid curing system involves thermal curing followed by a liquid rinse process using a double patterning primer (DPP). DPP is an aqueous solution formulated with SCA components and enhances "positive" interaction between L1 and L2 patterns. While CD loss of 5~6nm is observed without DPP treatment, ~11nm CD growth was observed with TCR after DPP treatment. The L1 CD after double patterning was precisely controllable by post-priming bake process with the rate of -0.3nm/°C in the temperature ranging from 120 ~ 150°C. Taking advantage of the CD growth with DPP treatment, we further developed three different advanced patterning schemes: 1. "Shrink Process Assisted by Double Exposure" (SPADE I), 2. "Space Patterning Assisted by Double Exposure" (SPADE II), and 3. "Sidewall Patterning Assisted by Double Exposure" (SPADE III). Using SPADE I, contact hole CD was reduced by 10~30nm and excellent through pitch performance was observed. SPADE I can also improve LER/LWR when used in the formation of smaller trenches. SPADE II was developed for self-aligned pitch splitting of contact holes and SPADE III was developed for self-aligned pitch splitting of lines. In this paper, the use of DPP in various SPADE technologies is described and its potential in the advanced patterning schemes is discussed.

Proceedings Article | 1 April 2009 Paper

Materials for single-etch double patterning process: surface curing agent and thermal cure resist

Young Bae, Yi Liu, Thomas Cardolaccia, John McDermott, Peter Trefonas, Ken Spizuoco, Michael Reilly, Amandine Pikon, Lori Joesten, Gary Zhang, George Barclay, Julia Simon, Stéphanie Gaurigan

Proceedings Volume 7273, 727306 (2009) https://doi.org/10.1117/12.814274

KEYWORDS: Double patterning technology, Photoresist processing, Image processing, Semiconducting wafers, Lithography, Photoresist materials, Cadmium, Metrology, Electron beam lithography, Coating

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Proceedings Article | 4 April 2008 Paper

Ellipsometry studies of the kinetic of deprotection of thin 193 nm positive tone resist film

H. Ridaoui, S. Derrough, C. Sourd, H. Trouve, A. Pikon, J. H. Tortai

Proceedings Volume 6923, 692326 (2008) https://doi.org/10.1117/12.773916

KEYWORDS: Ultraviolet radiation, Thin films, Lithography, Ellipsometry, Temperature metrology, Lamps, Time metrology, Optical properties, Xenon, Polymers

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Proceedings Article | 26 March 2008 Paper

Post-lithography characterization of ArF resists for 45 nm node implant layers and beyond

A. Pikon, G. Pohlers, S. Derrough, F. Milesi, J. Foucher

Proceedings Volume 6923, 69231D (2008) https://doi.org/10.1117/12.769466

KEYWORDS: Ions, Boron, Atomic force microscopy, Semiconducting wafers, Scanning electron microscopy, Fourier transforms, Silicon, Critical dimension metrology, Lithography, Monte Carlo methods

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Proceedings Article | 5 April 2007 Paper

Impact of acid diffusion length on resist LER and LWR measured by CD-AFM and CD-SEM

J. Foucher, A. Pikon, C. Andes, J. Thackeray

Proceedings Volume 6518, 65181Q (2007) https://doi.org/10.1117/12.712186

KEYWORDS: Line edge roughness, Atomic force microscopy, Line width roughness, Scanning electron microscopy, Critical dimension metrology, Diffusion, Photoresist materials, Lithography, 3D modeling, Etching

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Proceedings Article | 29 March 2006 Paper

Overcoming pattern collapse on e-beam and EUV lithography

A. Jouve, J. Simon, A. Pikon, H. Solak, C. Vannuffel, J.-H. Tortai

Proceedings Volume 6153, 61531C (2006) https://doi.org/10.1117/12.656400

KEYWORDS: Electron beam lithography, Capillaries, Liquids, Adhesives, Extreme ultraviolet lithography, Interfaces, Lithography, Polymers, Chemically amplified resists, Extreme ultraviolet

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Showing 5 of 6 publications

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