The integration of active devices such as lasers, modulators or photodetectors on silicon photonics platforms has enabled the development of efficient, performant, low-cost and scalable high-speed integrated transceivers for optical communications. In this invited contribution, we will review the most relevant work in the field so far and we will present our recent progress on high-speed integrated transceivers for silicon photonics. The most relevant figures of merit for integrated lasers and electro-absorption modulators for high-speed optical communications will be discussed, as well as our vision for future developments.
We will present our design strategies adopted to boost the performance of heterogeneously integrated III-V-on-Si quantum well lasers for optical communications. For that, we will revisit our recent work on the co-integration of dual-ring widely tunable lasers with semiconductor optical amplifiers on a silicon photonic platform. Also, we will present a nanosecond-tunable capacitive III-V-on-Si distributed feedback laser able to continuously tune its emission wavelength over a 10 GHz span in only 2 ns. Finally, we will show our latest results on low-k distributed feedback lasers with backside sample gratings, showing a high output power and a low laser linewidth.
We review our work on integrated lasers for optical communications. An InP-based multilayer stack containing Al-based quantum wells with optical gain in the telecom window is bonded onto a silicon-on-insulator wafer with patterned photonic circuits and cavities. Ring-based widely tunable lasers and narrow linewidth DFB lasers are demonstrated.
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