In this work, we incorporate 50 InGaAs quantum wells (QWs) into the bottom junction of an InGaP/GaAs dual junction solar cell. Tensile GaAsP is used to compensate the compressive wells, enabling high quality growth confirmed by high resolution XRD. A distributed Bragg reflector (DBR) is grown below the device, centered on the QW absorptive region for improved optical path length in the QWs. These structures enable an increase of 2.6 mA/cm² from sub-gap absorption with a minimal loss in voltage (11 mV) compared to a control device without QWs or DBR, providing an absolute efficiency increase of 3.6% under AM0.
Strained InGaAs (In = 8%) quantum wells (QW) were inserted into the intrinsic region of n-i-p InGaP/GaAs heterojunction solar cells, with thin (1 nm to 4nm) GaAs barriers separating the QWs. This design exhibited improved carrier collection from the QWs as compared to thicker barrier designs, as well as almost no degradation in Voc from control devices without QWs. Champion devices incorporating three layers of strained InGaAs QWs exhibited conversion efficiencies of >26%, exceeding that of the control, with corresponding short circuit current of 30.22 mA/cm2 and open circuit voltage of 1.03V under 1-sun AM1.5G solar spectrum.
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