Mr. Andreas Frangen Profile

Andreas Frangen

at Tekscend Photomask Germany GmbH

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 20 October 2006 Paper

Inspectability and printability of lines and spaces halftone masks for the advanced DRAM node

Arndt Dürr, Karsten Gutjahr, Jan Heumann, Martin Stengl, Frank Katzwinkel, Andreas Frangen, Thomas Witte

Proceedings Volume 6349, 63493O (2006) https://doi.org/10.1117/12.693061

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Printing, Scanning electron microscopy, Critical dimension metrology, Manufacturing, Halftones, Solids

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Proceedings Article | 15 March 2006 Paper

193-nm immersion photomask image placement in exposure tools

Eric Cotte, Benjamin Alles, Timo Wandel, Gunter Antesberger, Silvio Teuber, Manuel Vorwerk, Andreas Frangen, Frank Katzwinkel

Proceedings Volume 6154, 61541F (2006) https://doi.org/10.1117/12.656373

KEYWORDS: Photomasks, Image registration, Etching, Semiconducting wafers, Data analysis, Optical lithography, Lithography, Thermal effects, Electron beam lithography, Numerical simulations

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Proceedings Article | 12 May 2005 Paper

The challenge of high-volume 193-nm semiconductor manufacturing

U. Schroder, S. Poelders, T. Fischer, K. Schumacher, A. Kiss, A. Frangen, D. Nees, M. Kubis, G. Erley, B. Janke

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.594628

KEYWORDS: 193nm lithography, Semiconducting wafers, Photoresist materials, Etching, Photomasks, Lithography, Manufacturing, Semiconductor manufacturing, Metrology, Deep ultraviolet

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Proceedings Article | 6 December 2004 Paper

Mask manufacturing mix-and-match in front-end wafer processing

Andreas Frangen, Roland Jakob, Michael Kubis

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569235

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Metrology, Manufacturing, Optical proximity correction, Etching, Calibration, Overlay metrology, Cadmium

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Proceedings Article | 28 May 2004 Paper

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

Katrin Palitzsch, Michael Kubis, Uwe Schroeder, Karl Schumacher, Andreas Frangen

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.532328

KEYWORDS: Photomasks, Critical dimension metrology, Lithography, Optical proximity correction, Lithographic illumination, Semiconducting wafers, Etching, Reticles, Scanners, Monochromatic aberrations

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CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

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