The design and fabrication of a Monothically integrated dual-wavelength tunable photodetector are reported.
The dual-wavelength character is realized by introducing a taper substrate. The photodetector operating on
long wavelength is Monothically integrated by using heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n
structure on GaAs based GaAs/AlAs Fabry-Perot filter structure, which can be tuned by thermal-optic effect.
High quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. The integrated
device with a dual-peak distance of 7nm (1530nm,1537nm) , a wavelength tuning range of 5.0 nm, and a
3-dB bandwidth of 5.9 GHz was demonstrated, according with the theoretical simulation.
Optical receiver of high speed and high sensitivity is indispensable for long distance fiber-optic communication systems
of transmitting rate up to Gb/s. In recent years, OEIC (Optoelectronic Integrated Circuits) optical receiver has attracted
more and more attention for its advantages over conventional optical receiver such as minimized parasitics, lower cost,
higher reliability and compact size. In this paper, design of preamplifier for InP-based PIN/HBT OEIC optical receiver
with share layer structure was presented. As a basis for design of preamplifier, HBT large signal model (GP model)
was investigated and model parameters were extracted and optimized. The extracted GP model shows a good agreement
with measured characteristics of HBT fabricated. Based on this GP model, the preamplifier was designed and fabricated
which exhibits good high-frequency characteristics of −3dB bandwidth is up to 2.0 GHz.
In order to resolve the trade-off between quantum efficiency and response speed in resonant cavity enhanced (RCE) photodiode, the scheme of the transparent and unique pattern ohmic contact (TUPOC) microstructure was proposed. This scheme can be used for improving device's response speed by reducing the diode capacitance without influencing quantum efficiency. Three kinds of the TUPOC microstructures were proposed and simulated, the first one was realized. The response speed of the finished device with mesa area of 50×50μm2 is remarkably increased, 3dB bandwidth of 18GHz has been demonstrated, but the device without the TUPOC microstructure only have 3dB bandwidth of 9.47GHz.
We demonstrate a wavelength-selective photodetector that combines a Fabry-Perot filtering-cavity (FPC) with a taper absorption-cavity (TAC). The taper cavity shows non-resonant effect but exhibits absorption enhancement effect, so that high-speed, high quantum efficiency, wide tuning range and ultra-narrow spectral linewidth can be achieved simultaneously. Device performance was theoretically investigated by including key factors such as taper angle, finite-size diffracting-beam input, and lateral walk-off in the taper cavity. The device was fabricated by bonding a GaAs-based FPC, which can be tuned via thermal-optic effect, with an InP-based TAC. The experiment results of the devices were reported in another paper.
A kind of GaAs-based F-P(Fabry-Perot) cavity filter was presented. Its structure and tunability were analysed theoretically. Numerical simulation shows transmitted centre wavelength of the filter is 1.55μm, FWHM is 1.8nm and 0.6nm with 17 and 23 pairs of DBR respectively, a red shift of 7.2nm with temperature change of 100K, transmissivity almost keeps unchanged during tuning, and tuning wavelength is linear to temperature change. Further, long-wavelength-absorbed integrated photodetectors based on this filter structure was fabricated. Experimental results show a tuning wavelenghth of 10.2nm with power change of 200mW applied to the device, FWHM of about 0.6nm, and 4% quantum efficiency fluctuation during tuning. Good agreement with the simulation has been achieved.
Integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity (OMITMiC) structure, or OMITMiC wavelength-selective photodetector, is a kind of novel integrated multifunction optoelectronic device which was proposed in 1996 and first realized with GaAs-based materials for short wavelength (less than 1μm) operation in 2001. Recently, after great efforts on developing controllable self-retreating dynamic mask (CSRDM) wet etching method for InP-based epitaxial layer and low temperature InP/GaAs wafer bonding technique, such a device operating at long wavelength region (1550nm) had also been successfully demonstrated and the measurement results shown that it features high-speed (12GHz with a mesa area of 40×36 μm2), high quantum efficiency (66%~78.4%), ultra-narrow spectral linewidth (0.6 nm) and wide range tuning (more than 10 nm ) simultaneously. In addition, a long wavelength monolithic OMITMiC photodetector with GaInNAs absorption layer has also been demonstrated. These achievements could have a significant impact on wavelength-division-multiplexed (WDM) optical fiber transmission systems and networks.
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