Dr. Arpan P. Mahorowala Profile

Dr. Arpan P. Mahorowala

Research Staff Member at IBM TJ Watson Research Ctr

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 21 March 2007 Paper

Paper

Improving the power-performance of multicore processors through optimization of lithography and thermal processing

A. Gabor, T. Brunner, S. Bukofsky, S. Butt, F. Clougherty, S. Deshpande, T. Faure, O. Gluschenkov, K. Greene, J. Johnson, N. Le, P. Lindo, A. Mahorowala, H-J. Nam, D. Onsongo, D. Poindexter, J. Rankin, N. Rohrer, S. Stiffler, A. Thomas, H. Utomo

Proceedings Volume 6521, 65210K (2007) https://doi.org/10.1117/12.711750

KEYWORDS: Critical dimension metrology, Diffusion, Lithography, Etching, Semiconducting wafers, Integrated circuits, Optical proximity correction, Cadmium, Manufacturing, Optical lithography

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Proceedings Article | 20 October 2006 Paper

Paper

Mastering double exposure process window aware OPC by means of virtual targets

Henning Haffner, Zachary Baum, Carlos Fonseca, Scott Halle, Lars Liebmann, Arpan Mahorowala

Proceedings Volume 6349, 63491W (2006) https://doi.org/10.1117/12.687609

KEYWORDS: Optical proximity correction, Photomasks, Model-based design, Logic, Process modeling, SRAF, Critical dimension metrology, Photoresist processing, Tolerancing, Image processing

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Proceedings Article | 29 March 2006 Paper

Paper

Silicon containing polymer in applications for 193-nm high-NA lithography processes

Sean Burns, Dirk Pfeiffer, Arpan Mahorowala, Karen Petrillo, Alexandera Clancy, Katherina Babich, David Medeiros, Scott Allen, Steven Holmes, Michael Crouse, Colin Brodsky, Victor Pham, Yi-Hsiung Lin, Kaushal Patel, Naftali Lustig, Allen Gabor, Christopher Sheraw, Phillip Brock, Carl Larson

Proceedings Volume 6153, 61530K (2006) https://doi.org/10.1117/12.657197

KEYWORDS: Silicon, Reflectivity, Etching, Photoresist materials, Polymers, Lithography, Oxides, Silicon films, Reactive ion etching, Optical lithography

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Proceedings Article | 14 March 2006 Paper

Paper

Meeting critical gate linewidth control needs at the 65 nm node

Arpan Mahorowala, Scott Halle, Allen Gabor, William Chu, Alexandra Barberet, Donald Samuels, Amr Abdo, Len Tsou, Wendy Yan, Seiji Iseda, Kaushal Patel, Bachir Dirahoui, Asuka Nomura, Ishtiaq Ahsan, Faisal Azam, Gary Berg, Andrew Brendler, Jeffrey Zimmerman, Tom Faure

Proceedings Volume 6156, 61560M (2006) https://doi.org/10.1117/12.659427

KEYWORDS: Critical dimension metrology, Etching, Semiconducting wafers, Photomasks, Optical proximity correction, Lithography, Cadmium, Reticles, Control systems, Immersion lithography

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Proceedings Article | 4 May 2005 Paper

Paper

Line edge roughness reduction by plasma curing photoresists

Arpan Mahorowala, Kuang-Jung Chen, Ratnam Sooriyakumaran, Aleksandra Clancy, Dakshi Murthy, Stacy Rasgon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600043

KEYWORDS: Photoresist materials, Plasma, Etching, Line edge roughness, Polymers, Surface roughness, Polymer thin films, Semiconducting wafers, Atomic force microscopy, FT-IR spectroscopy

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Proceedings Article | 24 May 2004 Paper

Paper

Preliminary evaluation of line-edge roughness metrology based on CD-SAXS

Ronald Jones, Tengjiao Hu, Christopher Soles, Eric Lin, Wen-li Wu, Diego Casa, Arpan Mahorowala

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535693

KEYWORDS: Line edge roughness, Scattering, Metrology, Edge roughness, Photoresist materials, Diffraction, X-rays, Diffraction gratings, Fourier transforms, Laser scattering

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Proceedings Article | 28 August 2003 Paper

Paper

Current developments of a high-performance CA resist for mask-making application

Wu-Song Huang, Wei He, Wenjie Li, Wayne Moreau, Robert Lang, David Medeiros, Karen Petrillo, Arpan Mahorowala, Marie Angelopoulos, Christina Deverich, Chester Huang, Paul Rabidoux

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504049

KEYWORDS: Etching, Photomasks, Polymers, Silicon, Chromium, Semiconducting wafers, Mask making, Resistance, Lithography, Scanning electron microscopy

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The mask fabrication industry is slowly migrating to chemically amplified (CA) resists to take the advantages of their high contrast, resolution, and sensitivity. During this migration process, the industry has encountered several problems associated with CA resists such as baking homogeneity of thick mask plates on hot plates, footing on Cr masks, and storage stability of mask blanks. In addressing these issues, we have adopted a low Ea CA resist platform to overcome the bake latitude issue. The resist formulation has been reformulated to reduce the footing and a new package method has been introduced to extend the storage of the blanks. In addition, we will also discuss our studies on two major areas, such as sensitivity and etch resistance, which we think is extremely important for E-beam resists in the future. The mask industry started with 248nm DUV CA resist systems and then found out that there was a need for even higher sensitivity resist systems to address the throughput issue. In our early study, we have observed that by simply increasing photoacid generator loading in the resist formulation we were able to increase the sensitivity, but there was a significant reduction in the dose latitude. After studying the dissolution and inhibition properties of different PAGs, we have been able to optimize PAG and base loading in combination with proper choice of PAGs to achieve high sensitivity and large dose latitude. The new resist formulation exhibits a large dose latitude of 38% for 100 nm l/s images with high sensitivity of 4.4μC/cm² at 100 kV. Due to the electron scattering effect and the image collapse issues with thicker resists, thinner imaging layer is desirable. Sufficient etch selectivity is needed to compensate the insufficient resist thickness. Therefore, there is a need to develop a high Cl₂/O₂ RIE (used in Cr etch process) etch resistant resist system for mask making. We have reported earlier that a resist formulation based on blending KRS-XE with SSQ polymer has resolved 50nm l/s resist images with etch rate 20% better than conventional novolak I-line resist systems. Since then, we have investigated a few new SSQ polymers and found some lithographic improvement in this new blending systems due to better compatibility of the SSQ polymer to the KRS-XE.

SPIE Journal Paper | 1 July 2003

Fabrication challenges for next-generation devices: Microelectromechanical systems for radio-frequency wireless communications

David Seeger, Jennifer Lund, Christopher Jahnes, Lili Deligianni, Paivikki Buchwalter, Panayotis Andricacos, Raul Acosta, Inna Babich, Arpan Mahorowala, Joanna Rosner, John Cotte

JM3, Vol. 2, Issue 03, (July 2003) https://doi.org/10.1117/12.10.1117/1.1586707

KEYWORDS: Microelectromechanical systems, Switches, Resonators, Lithography, Semiconductors, Electrodes, Capacitors, Semiconducting wafers, Metals, Wireless communications

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Proceedings Article | 12 June 2003 Paper

Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

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Proceedings Article | 12 June 2003 Paper

Paper

Hardmask technology for sub-100-nm lithographic imaging

Katherina Babich, Arpan Mahorowala, David Medeiros, Dirk Pfeiffer, Karen Petrillo, Marie Angelopoulos, Alfred Grill, Vishnubhai Patel, Scott Halle, Timothy Brunner, Richard Conti, Scott Allen, Richard Wise

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485174

KEYWORDS: Etching, Silicon, Reflectivity, Lithography, Plasma, Interfaces, Photoresist processing, Electron beam lithography, Plasma enhanced chemical vapor deposition, Image resolution

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Proceedings Article | 12 June 2003 Paper

Paper

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond

Dirk Pfeiffer, Arpan Mahorowala, Katherina Babich, David Medeiros, Karen Petrillo, Marie Angelopoulos, Wu-Song Huang, Scott Halle, Colin Brodsky, Scott Allen, Steven Holmes, Ranee Kwong, Robert Lang, Phillip Brock

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485178

KEYWORDS: Silicon, Etching, Lithography, Polymers, Oxides, Photoresist processing, Reflectivity, Silicon films, 193nm lithography, Bottom antireflective coatings

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Proceedings Article | 24 July 2002 Paper

Paper

Applicaton of blends and side chain Si-O copolymers as high-etch-resistant sub-100-nm e-beam resists

Wu-Song Huang, Ranee Kwong, Wayne Moreau, Robert Lang, David Medeiros, Karen Petrillo, Arpan Mahorowala, Marie Angelopoulos, Qinghuang Lin, Junyan Dai, Christopher Ober

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474242

KEYWORDS: Etching, Polymers, Silicon, Lithography, Resistance, Mask making, Polymer thin films, Atomic force microscopy, Surface roughness, Chromium

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Proceedings Article | 24 July 2002 Paper

Paper

Evolution of a 193-nm bilayer resist for manufacturing

Ranee Kwong, Mahmoud Khojasteh, Margaret Lawson, Timothy Hughes, Pushkara Varanasi, William Brunsvold, Robert Allen, Phillip Brock, Ratnam Sooriyakumaran, Hoa Truong, Arpan Mahorowala, David Medeiros

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474239

KEYWORDS: Silicon, Etching, Polymers, Lithography, Reactive ion etching, 193nm lithography, Photomasks, Manufacturing, Absorbance, Resistance

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Proceedings Article | 1 July 2002 Paper

Paper

Fabrication challenges for next-generation devices: MEMS for rf wireless communications

David Seeger, Jennifer Lund, Christopher Jahnes, Lili Deligianni, Paivikki Buchwalter, Panayotis Andricacos, Raul Acosta, Inna Babich, Arpan Mahorowala, Joanna Rosner, John Cotte

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472298

KEYWORDS: Microelectromechanical systems, Switches, Lithography, Resonators, Semiconductors, Electrodes, Capacitors, Wireless communications, Semiconducting wafers, Optical lithography

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Proceedings Article | 14 September 2001 Paper

Paper

193 lithography and RELACS processing for BEOL lithography

Ronald DellaGuardia, Karen Petrillo, Jia Chen, Paul Rabidoux, Timothy Dalton, Steven Holmes, Linda Hadel, K. Malone, Arpan Mahorowala, S. Greco, Richard Ferguson

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435636

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Printing, Etching, Photoresist processing, Optical proximity correction, 193nm lithography, Photoresist materials, Resistance

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Proceedings Article | 14 September 2001 Paper

Paper

When is bilayer thin-film imaging suitable: comparison with single-layer resists

Scott Halle, Alan Thomas, Michael Armacost, Timothy Dalton, Xiaochun Chen, Scott Bukofsky, Oliver Genz, Zhijian Lu, Shahid Butt, Zheng Chen, Richard Ferguson, Eric Coker, Robert Leidy, Qinghuang Lin, Arpan Mahorowala, Katherina Babich, Karen Petrillo, Marie Angelopoulos, Mark Ignatowicz, Bang Bui

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435797

KEYWORDS: Etching, Photomasks, Dielectrics, Lithography, Oxides, Thin films, Silicon, Reactive ion etching, Photoresist processing, Scanning electron microscopy

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Proceedings Article | 5 September 2001 Paper

Paper

High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making

Wu-Song Huang, Ranee Kwong, Wayne Moreau, Robert Lang, Christopher Robinson, David Medeiros, Karen Petrillo, Ari Aviram, Arpan Mahorowala, Marie Angelopoulos, Christopher Magg, Mark Lawliss, Thomas Faure

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438350

KEYWORDS: Etching, Silicon, Resistance, Mask making, Dry etching, Lithography, Photoresist processing, Chromium, Photomasks, Image resolution

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Proceedings Article | 24 August 2001 Paper

Paper

Characterization of new aromatic polymers for 157-nm photoresist applications

Nicolette Fender, Phillip Brock, W. Chau, S. Bangsaruntip, Arpan Mahorowala, Gregory Wallraff, William Hinsberg, Carl Larson, Hiroshi Ito, Gregory Breyta, Kikue Burnham, Hoa Truong, P. Lawson, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436873

KEYWORDS: Polymers, Diffusion, Absorbance, Fluorine, Etching, Photoresist materials, Lithography, Silicon, Semiconducting wafers, Transparency

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Proceedings Article | 24 August 2001 Paper

Paper

IBM 193-nm bilayer resist: materials, lithographic performance, and optimization

Ranee Kwong, Pushkara Varanasi, Margaret Lawson, Timothy Hughes, George Jordhamo, Mahmoud Khojasteh, Arpan Mahorowala, Ratnam Sooriyakumaran, Phillip Brock, Carl Larson, Debra Fenzel-Alexander, Hoa Truong, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436892

KEYWORDS: Etching, 193nm lithography, Photomasks, Polymers, Reactive ion etching, Lithography, Silicon, Resistance, Glasses, Antireflective coatings

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Proceedings Article | 20 August 2001 Paper

Paper

Tunable antireflective coatings with built-in hard mask properties facilitating thin-resist processing

Arpan Mahorowala, Katherina Babich, Karen Petrillo, John Simons, Marie Angelopoulos, Vishnubhai Patel, Alfred Grill, Scott Halle, Richard Conti, ChungHsi Wu, Richard Wise, Linda Chen, Alan Thomas, B. Lee, Oliver Genz

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436710

KEYWORDS: Photomasks, Etching, Silicon, Reflectivity, Electron beam lithography, Interfaces, Lithography, Oxides, Antireflective coatings, Dielectrics

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Patterning sub-150 nm features in dielectric stacks using single layer resist processes in conjunction with organic anti-reflective coatings (ARCs) is becoming very difficult. Typical organic ARC-open etch processes suffer from poor ARC-to-resist selectivities (~0.7), and are accompanied by critical dimension (CD) losses. The resist remaining is often not sufficient to prevent artifacts such as substrate microrevicing during subsequent etches. PECVD-Deposited titanium nitride and silicon oxynitride films have been investigated as ARC layers but their basic nature has caused residue formation at the resist/ARC interface. We have developed a PECVD-deposited material, TERA (Tunable Etch-Resistant ARC) that acts as an ARC at 248 nm and 193 nm wavelengths and provides excellent etch selectivity to resist surpassing those attained with organic ARCs. In addition, this material demonstrates excellent hard mask properties for subsequent dielectric etch steps. The optical properties of these films can be easily tuned to minimize substrate reflectance at either imaging wavelength by controlling the precursor composition and deposition conditions. The films are compatible with 248 nm and 193 nm resists - no footing, undercut or residue is observed during patterning. The films can be etched selectively to resist (selectivity ~2.5) that translates to less resist consumption during th ARC-open etch. Compared to resists, TERA demonstrates better etch resistance while patterning dielectric stacks - the silicon oxide-to-TERA Selectivity exceeds 8. In this paper, the excellent optical tunability and substrate reflectivity control achieved with TERA are discussed. Clean lithography using 248 nm, 193 nm and e- beam resists is shown. The etch characteristics of TERA in fluorocarbon and halogen-based plasma chemistries are discussed. Finally, the formation of 135 nm and 120 nm deep trench patterns in thick dielectric stacks using TERA in conjunction with commercial 248 nm and 193 nm resists, respectively is demonstrated. The extendability of this approach to pattern silicon without roughening or microrevicing using sub-200 nm thick resists is motivated.

Proceedings Article | 20 August 2001 Paper

Paper

High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making

Wu-Song Huang, Ranee Kwong, Wayne Moreau, Robert Lang, Christopher Robinson, David Medeiros, Karen Petrillo, Ari Aviram, Arpan Mahorowala, Marie Angelopoulos, Christopher Magg, Mark Lawliss, Thomas Faure

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436656

KEYWORDS: Etching, Silicon, Resistance, Photomasks, Mask making, Lithography, Dry etching, Photoresist processing, Chromium, Image resolution

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Proceedings Article | 23 June 2000 Paper

Paper

193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers

Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Phillip Brock, Carl Larson, Richard Di Pietro, Gregory Wallraff, Donald Hofer, Dan Dawson, Arpan Mahorowala, Marie Angelopoulos

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388282

KEYWORDS: Polymers, Silicon, Lithography, Etching, Absorbance, Silicon films, Image processing, Photoresist developing, Deep ultraviolet, Oxygen

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Proceedings Article | 11 June 1999 Paper

Paper

High-resolution 248-nm bilayer resist

Qinghuang Lin, Karen Petrillo, Katherina Babich, Douglas LaTulipe, David Medeiros, Arpan Mahorowala, John Simons, Marie Angelopoulos, Gregory Wallraff, Carl Larson, Debra Fenzel-Alexander, Ratnam Sooriyakumaran, Gregory Breyta, Phillip Brock, Richard Di Pietro, Donald Hofer

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350207

KEYWORDS: Silicon, Etching, Polymers, Reactive ion etching, Lithography, Imaging systems, Resistance, Optical properties, Photomasks, Silicon films

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Showing 5 of 23 publications

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