Dr. Arūnas Kadys Profile

Dr. Arūnas Kadys

at Vilnius Univ

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Author

Publications (5)

Proceedings Article | 7 December 2013 Paper

Fabrication and replication of micro-optical structures for growth of GaN-based light emitting diodes

G. Gervinskas, G. Seniutinas, A. Vijayakumar, S. Bhattacharya, E. Jelmakas, A. Kadys, R. Tomašiūnas, S. Juodkazis

Proceedings Volume 8923, 89234L (2013) https://doi.org/10.1117/12.2033709

KEYWORDS: Nickel, Gallium nitride, Sapphire, Optical components, Light emitting diodes, Electron beam lithography, Ion beams, Scanning electron microscopy, Lamps, Axicons

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Proceedings Article | 28 February 2012 Paper

Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

T. Malinauskas, A. Kadys, T. Grinys, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, J. Mickevičius, R. Tomašiūnas, K. Jarašiūnas, M. Vengris, S. Okur, V. Avrutin, X. Li, F. Zhang, Ü. Özgür, H. Morkoç

Proceedings Volume 8262, 82621S (2012) https://doi.org/10.1117/12.906488

KEYWORDS: Quantum wells, Indium gallium nitride, Indium, Picosecond phenomena, Light emitting diodes, Diffusion, Gallium nitride, Carrier dynamics, Absorbance, Diffraction

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Proceedings Article | 2 December 2008 Paper

Evaluation of deep trap compensation ratio and recombination parameters by transient grating techniques

A. Kadys, K. Jarasiunas, Ph. Delaye, D. Verstraeten

Proceedings Volume 7142, 71420O (2008) https://doi.org/10.1117/12.815623

KEYWORDS: Diffraction gratings, Diffraction, Absorption, Crystals, Modulation, Gallium arsenide, Annealing, Vanadium, Picosecond phenomena, Laser beam diagnostics

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Proceedings Article | 25 January 2007 Paper

Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling

Arūnas Kadys, Ramūnas Aleksiejūnas, Kęstutis Jarašiūnas, Liudas Subačius

Proceedings Volume 6596, 65960S (2007) https://doi.org/10.1117/12.726452

KEYWORDS: Iron, Electrons, Diffraction, Picosecond phenomena, Crystals, Diffusion, Carrier dynamics, Numerical modeling, Diffraction gratings, Four wave mixing

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Proceedings Article | 25 January 2007 Paper

Mapping of differently doped InP wafers by nanosecond and picosecond four-wave mixing techniques

Saulius Nargelas, Ramūnas Aleksiejūnas, Arūnas Kadys, Vytautas Gudelis, Kęstutis Jarašiūnas

Proceedings Volume 6596, 65960R (2007) https://doi.org/10.1117/12.726447

KEYWORDS: Semiconducting wafers, Diffraction, Diffusion, Picosecond phenomena, Diffraction gratings, Four wave mixing, Energy efficiency, Crystals, Iron, Carrier dynamics

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