In this work a heterogeneously integrated germanium (Ge) NIR photo-resistor fabricated on CMOS-compatible silicon substrates is presented. The resistor is fabricated on an epitaxial germanium films grown on silicon using a novel liquid phase crystallization (LPC) process. First, silicon wafers were coated with amorphous germanium deposited using PECVD. Next, Ge film is crystallized into epitaxial germanium using a thermal anneal cycle during which Ge undergoes melting and controlled cooling. The LPE Ge films is polycrystalline but epitaxial with threading dislocation density of ~109 cm-2. On the LPE germanium, NIR photo-resistors were fabricated with metal-semiconductor-metal (MSM) inter-digitated structure with an active area of 150 μm x 300 μm. Responsivity of the devices was characterized using a fiber laser, tunable from 1500 to 1600 nm. With 1550 nm excitation, a photocurrent of 100 μA was measured at a bias of 4V with laser power of 25 mW, corresponding to a responsivity of 4 mA/W.
We propose and demonstrate a Silicon MSM photodetector integrated on Silicon Nitride-on-SOI platform. The demonstration shows the feasibility of an integrated photonic circuit platform in the visible to NIR wavelength with an integrated Silicon photodetector. We present a planarization free oxidation based Silicon Nitride waveguide fabrication on SOI. DC measurements on photo-detectors with the top illumination of 850 nm light observe the best responsivity of 0.1 A/W at 20 V with a dark current of 570 nA.
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