Dr. Barry R. Lieberman Profile

Dr. Barry R. Lieberman

Retired

SPIE Involvement:

Author | Instructor

Proceedings Article | 29 May 2007 Paper

Progress on EUV mask fabrication for 32-nm technology node and beyond

Guojing Zhang, Pei-Yang Yan, Ted Liang, Seh-jin Park, Peter Sanchez, Emily Shu, Erdem Ultanir, Sven Henrichs, Alan Stivers, Gilroy Vandentop, Barry Lieberman, Ping Qu

Proceedings Volume 6607, 66070R (2007) https://doi.org/10.1117/12.728941

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Inspection, Extreme ultraviolet, Multilayers, Reflectivity, Etching, Mask making, Metrology, Defect inspection

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Proceedings Article | 5 April 2007 Paper

Study of rigorous effects and polarization on phase shifting masks through simulations and in-die phase measurements

Kyung Lee, Malahat Tavassoli, Max Lau, Kiho Baik, Barry Lieberman, Sascha Perlitz, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 6518, 65181Y (2007) https://doi.org/10.1117/12.712908

KEYWORDS: Photomasks, Phase measurement, Scanners, Etching, Semiconducting wafers, Polarization, Phase shifts, Metrology, Near field, Imaging systems

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Proceedings Article | 15 March 2007 Paper

Rigorous model for registration error due to EUV reticle non-flatness and a proposed disposition and compensation technique

Barry Lieberman

Proceedings Volume 6517, 65171N (2007) https://doi.org/10.1117/12.707136

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Metrology, Reticles, Semiconducting wafers, Error analysis, Interferometers, 3D modeling, Lithography

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Proceedings Article | 8 November 2005 Paper

Magnetron reactive sputtering of TaN and TaON films for EUV mask applications

Kyung Lee, Malahat Tavassoli, Alan Stivers, Barry Lieberman

Proceedings Volume 5992, 59922B (2005) https://doi.org/10.1117/12.625006

KEYWORDS: Particles, Inspection, Reflectivity, Extreme ultraviolet, Photomasks, Argon, Optical properties, Sputter deposition, Diffractive optical elements, Surface roughness

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Proceedings Article | 6 December 2004 Paper

DIVAS: fully automated simulation based mask defect dispositioning and defect management system

Saghir Munir, Daniel Bald, Vikram Tolani, Firoz Ghadiali, Barry Lieberman

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569096

KEYWORDS: Inspection, Photomasks, Databases, Semiconducting wafers, Data archive systems, Computer simulations, Image processing, Defect inspection, Lithography, Critical dimension metrology

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Proceedings Article | 6 December 2004 Paper

EUV mask pilot line at Intel Corporation

Alan Stivers, Pei-Yang Yan, Guojing Zhang, Ted Liang, Emily Shu, Edita Tejnil, Barry Lieberman, Rajesh Nagpal, Kangmin Hsia, Michael Penn, Fu-Chang Lo

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569176

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Extreme ultraviolet lithography, Reflectivity, Metrology, Lithography, Optical lithography, Standards development, Mask making

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Proceedings Article | 27 December 2002 Paper

PRIMADONNA: a system for automated defect disposition of production masks using wafer lithography simulation

Daniel Bald, Saghir Munir, Barry Lieberman, William Howard, Chris Mack

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467768

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Lithography, Image processing, Reticles, Databases, Defect inspection, Infrared imaging, Computer simulations

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Proceedings Article | 27 December 2002 Paper

Evaluation of the capability of a multibeam confocal inspection system for inspection of EUVL mask blanks

Alan Stivers, Ted Liang, Michael Penn, Barry Lieberman, Gilbert Shelden, James Folta, Cindy Larson, Paul Mirkarimi, Christopher Walton, Eric Gulliksong, Moonsuk Yi

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468199

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect detection, Particles, Gold, Extreme ultraviolet lithography, Semiconducting wafers, Optical spheres, Multilayers

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Showing 5 of 8 publications

Course Instructor

SC617: Advanced Topics in Electron Beam Lithography

This course covers advanced concepts in the patterning of photomasks or wafers by electron beam lithography. The course focuses on understanding the fundamental electron-material interaction mechanisms that form the basis of the exposure process and then proceeds to discuss the post-exposure process. This course is complementary to other courses that emphasize electron beam lithography instrumentation and writing techniques. The course is divided into six main topics: introductory material, basic electron-material interactions, applications to photomask exposure, electron proximity correction, use of simulation techniques to model the exposure process, and post exposure processing.

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