Mr. Bert Du Bois Profile

Bert Du Bois

at IMEC

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 15 March 2018 Presentation

Integrated metasurface photonics for miniature flow cytometry (Conference Presentation)

Niels Verellen, Dries Vercruysse, Veronique Rochus, Bert Du Bois, Alexandra Dusa, Sarp Kerman, Md. Mahmud-Ul-Hasan, Pol Van Dorpe, Xavier Rottenberg, Liesbet Lagae

Proceedings Volume 10506, 105060X (2018) https://doi.org/10.1117/12.2287116

KEYWORDS: Photonics, Optical components, Flow cytometry, Silicon, Diffraction gratings, Life sciences, Visible radiation, Waveguides, Integrated optics, Integrated photonics

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Proceedings Article | 1 May 2014 Paper

Optical power distributions through fractal routing

Roelof Jansen, Tom Claes, Pieter Neutens, Bert Du Bois, Philippe Helin, Simone Severi, Pol Van Dorpe, Paru Deshpande, Xavier Rottenberg

Proceedings Volume 9133, 91331K (2014) https://doi.org/10.1117/12.2052486

KEYWORDS: Fractal analysis, Brain-machine interfaces, Waveguides, Antennas, Photonic microstructures, Integrated optics, Sensors, Tolerancing, Image processing, Plasma enhanced chemical vapor deposition

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Proceedings Article | 1 May 2014 Paper

Large-scale characterization of silicon nitride-based evanescent couplers at 532nm wavelength

Tom Claes, Roelof Jansen, Pieter Neutens, Bert Du Bois, Philippe Helin, Simone Severi, Pol Van Dorpe, Paru Deshpande, Xavier Rottenberg

Proceedings Volume 9133, 91331H (2014) https://doi.org/10.1117/12.2052453

KEYWORDS: Silicon, Waveguides, Photonics, Plasma enhanced chemical vapor deposition, Reactive ion etching, Silicon photonics, Photonic integrated circuits, Wave propagation, 3D modeling, Standards development

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Recently, the photonics community has a renewed attention for silicon nitride.^1-3 When deposited at temperatures below 650K with plasma-enhanced chemical vapor deposition (PECVD),⁴ it enables photonic circuits fabricated on-top of standard complementary metaloxidesemiconductor (CMOS) electronics. Silicon nitride is moreover transparent to wavelengths that are visible to the human eye and detectable with available silicon detectors, thus offering a photonics platform for a range of applications that is not accessible with the popular silicon-on-insulator platform. However, first-time-right design of large-scale circuits for demanding specifications requires reliable models of the basic photonic building blocks, like evanescent couplers (Figure 1), components that couple power between multiple waveguides. While these models typically exist for the silicon-on-insulator platform, they still lack maturity for the emerging silicon nitride platform. Therefore, we meticulously studied silicon nitride-based evanescent couplers fabricated in our 200mm-wafer facility. We produced the structures in a silicon nitride film deposited with low-temperature PECVD, and patterned it using optical lithography at a wavelength of 193nm and reactive ion etching. We measured the performance of as much as 250 different designs at 532nm wavelength, a central wavelength in the visible range for which laser sources are widespread. For each design, we measured the progressive transmission of up-to 10 cascaded identical couplers (Figure 2(a)), yielding very accurate figures for the coupling factor (Figure 2(b)). This paper presents the trends extracted from this vast data set (Figure 3), and elaborates on the impact of the couplers bend radius and gap on its coupling factors (Figure 4 and Figure 5). We think that the large- scale characterization of evanescent couplers presented in this paper, in excellent agreement with the simulated performance of the devices, forms the basis for a component library that enables accurate design of silicon nitride-based photonic circuitry.

Proceedings Article | 1 May 2014 Paper

Characterization of PECVD silicon nitride photonic components at 532 and 900 nm wavelength

P. Neutens, A. Subramanian, M. Ul Hasan, C. Chen, R. Jansen, T. Claes, X. Rottenberg, B. Du Bois, K. Leyssens, P. Helin, S. Severi, A. Dhakal, F. Peyskens, L. Lagae, P. Deshpande, R. Baets, P. Van Dorpe

Proceedings Volume 9133, 91331F (2014) https://doi.org/10.1117/12.2052119

KEYWORDS: Waveguides, Oxides, Wave propagation, Cladding, Silicon, Silicon photonics, Plasma enhanced chemical vapor deposition, Resonators, Electron beam lithography, Semiconducting wafers

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Proceedings Article | 1 July 2005 Open Access

SIGEM, low-temperature deposition of poly-SiGe MEMs structures on standard CMOS circuits

Juan Ramos-Martos, Joaquin Ceballos-Caceres, Antonio Ragel-Morales, Jose Miguel Mora-Gutierrez, Alberto Arias-Drake, Miguel Angel Lagos-Florido, Jose Maria Munoz-Hinojosa, Anshu Mehta, Agnes Verbist, Bert du Bois, Kersten Kehr, Christina Leinenbach, Steven Van Aerde, Jorg Spengler, Ann Witvrouw

Proceedings Volume 5836, (2005) https://doi.org/10.1117/12.608499

KEYWORDS: Amplifiers, Signal to noise ratio, Sensors, Signal detection, Modulators, Microelectromechanical systems, Digital signal processing, Electrodes, Resonators, Semiconducting wafers

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Proceedings Article | 10 October 2003 Paper

Small two-dimensional and linear arrays of polycrystalline SiGe microbolometers at IMEC-XenICs

Vladimir Leonov, Ybe Creten, Piet De Moor, Bert Du Bois, Claus Goessens, Bob Grietens, Patrick Merken, Natalia Perova, Gerlinde Ruttens, Chris Van Hoof, Agnes Verbist, Jan Vermeiren

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.487084

KEYWORDS: Bolometers, Sensors, Microbolometers, Infrared radiation, Resistance, Readout integrated circuits, Temperature metrology, Calibration, Black bodies, Thermography

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Proceedings Article | 25 March 2003 Paper

Micromachined poly-SiGe bolometer arrays for infrared imaging and spectroscopy

Vladimir Leonov, Natalia Perova, Piet De Moor, Bert Du Bois, Claus Goessens, Bob Grietens, Agnes Verbist, Chris Van Hoof, Jan Vermeiren

Proceedings Volume 4945, (2003) https://doi.org/10.1117/12.468410

KEYWORDS: Bolometers, Sensors, Resistance, Microbolometers, Infrared radiation, Thermography, Infrared imaging, Infrared bolometers, Imaging arrays, Thermal modeling

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Proceedings Article | 25 August 2000 Paper

Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal

Ann Witvrouw, Bert Du Bois, Piet De Moor, Agnes Verbist, Chris Van Hoof, Hugo Bender, Christiaan Baert

Proceedings Volume 4174, (2000) https://doi.org/10.1117/12.396423

KEYWORDS: HF etching, Etching, Oxides, Vapor etching, Metals, Semiconducting wafers

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