Dr. Berta A. Dinu Profile

Dr. Berta A. Dinu

Senior System Engineer at KLA Israel

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Publications (9)

Proceedings Article | 2 April 2010 Paper

Mask registration and wafer overlay

Chulseung Lee, Changjin Bang, Myoungsoo Kim, Hyosang Kang, Dohwa Lee, Woonjae Jeong, Ok-Sung Lim, Seunghoon Yoon, Jaekang Jung, Frank Laske, Lidia Parisoli, Klaus-Dieter Roeth, John Robinson, Sven Jug, Pavel Izikson, Berta Dinu, Amir Widmann, DongSub Choi

Proceedings Volume 7638, 76382I (2010) https://doi.org/10.1117/12.846321

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Scanners, Pellicles, Metrology, Image registration, Distance measurement, Distortion, Double patterning technology

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Proceedings Article | 23 March 2009 Paper

Overlay metrology for double patterning processes

Philippe Leray, Shaunee Cheng, David Laidler, Daniel Kandel, Mike Adel, Berta Dinu, Marco Polli, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 7272, 72720G (2009) https://doi.org/10.1117/12.814182

KEYWORDS: Overlay metrology, Double patterning technology, Semiconducting wafers, Diffraction, Scanners, Calibration, Metrology, Diffraction gratings, Spectroscopy, Polarizers

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The double patterning (DPT) process is foreseen by the industry to be the main solution for the 32 nm technology node and even beyond. Meanwhile process compatibility has to be maintained and the performance of overlay metrology has to improve. To achieve this for Image Based Overlay (IBO), usually the optics of overlay tools are improved. It was also demonstrated that these requirements are achievable with a Diffraction Based Overlay (DBO) technique named SCOL^TM [1]. In addition, we believe that overlay measurements with respect to a reference grid are required to achieve the required overlay control [2]. This induces at least a three-fold increase in the number of measurements (2 for double patterned layers to the reference grid and 1 between the double patterned layers). The requirements of process compatibility, enhanced performance and large number of measurements make the choice of overlay metrology for DPT very challenging. In this work we use different flavors of the standard overlay metrology technique (IBO) as well as the new technique (SCOL) to address these three requirements. The compatibility of the corresponding overlay targets with double patterning processes (Litho-Etch-Litho-Etch (LELE); Litho-Freeze-Litho-Etch (LFLE), Spacer defined) is tested. The process impact on different target types is discussed (CD bias LELE, Contrast for LFLE). We compare the standard imaging overlay metrology with non-standard imaging techniques dedicated to double patterning processes (multilayer imaging targets allowing one overlay target instead of three, very small imaging targets). In addition to standard designs already discussed [1], we investigate SCOL target designs specific to double patterning processes. The feedback to the scanner is determined using the different techniques. The final overlay results obtained are compared accordingly. We conclude with the pros and cons of each technique and suggest the optimal metrology strategy for overlay control in double patterning processes.

Proceedings Article | 16 April 2008 Paper

Overlay control using scatterometry based metrology (SCOM) in production environment

Berta Dinu, Stefan Fuchs, Uwe Kramer, Michael Kubis, Anat Marchelli, Alessandra Navarra, Christian Sparka, Amir Widmann

Proceedings Volume 6922, 69222S (2008) https://doi.org/10.1117/12.771581

KEYWORDS: Overlay metrology, Scatterometry, Metrology, Semiconducting wafers, Signal processing, Lithography, Wafer testing, Sensors, Optical design, Spectroscopy

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Proceedings Article | 18 June 2007 Paper

Differential signal scatterometry overlay metrology: an accuracy investigation

Daniel Kandel, Mike Adel, Berta Dinu, Boris Golovanevsky, Pavel Izikson, Vladimir Levinski, Irina Vakshtein, Philippe Leray, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 6616, 66160H (2007) https://doi.org/10.1117/12.725929

KEYWORDS: Overlay metrology, Scatterometry, Semiconducting wafers, Detection and tracking algorithms, Computer simulations, Silicon, Standards development, Electromagnetism, Metrology, Algorithms

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Proceedings Article | 10 May 2005 Paper

Cost effective CD control for DUV implant layers using the Archer MPX focus-exposure monitor

Sean Hannon, Brad Eichelberger, Chris Nelson, Berta Dinu, Harold Kennemer, Kevin Monahan

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600130

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Metrology, Finite element methods, Scanners, Overlay metrology, Data modeling, Nano opto mechanical systems, Standards development

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Proceedings Article | 10 May 2005 Paper

Separating cluster contribution to improve CD distribution using simultaneous dose-focus monitoring on production wafers

Louis-Pierre Armellin, Virginie Dureuil, Olivier Guillaume, Philippe Alet, Brad Eichelberger, Michel Egreteau, Marco Polli, Berta Dinu

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598045

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Scanners, Scanning electron microscopy, Finite element methods, Calibration, Control systems, Diagnostics, Temperature metrology, Statistical modeling

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Proceedings Article | 24 May 2004 Paper

Effect of inline dose and focus monitoring and control on post-etch CD

Berta Dinu, Venkatram Subramony, Pei Chin Lim, Dawn Goh, Brad Eichelberger, Kwong Boo Chew, Kevin Monahan

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535241

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Data modeling, Standards development, Lithography, Process control, Finite element methods, Optical testing, Optical lithography

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Proceedings Article | 24 May 2004 Paper

Edge die focus-exposure monitoring and compensation to improve CD distributions

Brad Eichelberger, Venkatram Subramony, Augustine Chew, Berta Dinu, Dawn Goh, Pei Chin Lim, Kevin Monahan

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535196

KEYWORDS: Semiconducting wafers, Etching, Scanners, Metrology, Yield improvement, Overlay metrology, Finite element methods, Critical dimension metrology, Scanning electron microscopy, Wafer-level optics

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Proceedings Article | 2 June 2003 Paper

Simultaneous dose and focus monitoring on product wafers

Brad Eichelberger, Berta Dinu, H. Pedut

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483473

KEYWORDS: Semiconducting wafers, Metrology, Finite element methods, Scanners, Calibration, Data modeling, Phase modulation, Critical dimension metrology, Atrial fibrillation, Microelectronics

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Showing 5 of 9 publications

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