The study of the effect of γ-rays on the characteristic parameters of the HgCdTe Infrared Focal Plane Arrays (IRFPA) was carried out to address the problem of degradation of the characteristic parameters of IRFPA after irradiated by energetic particles in the space environment. The HgCdTe IRFPA was irradiated with 60Co γ-rays and annealed at 77K after irradiation. The dark current, responsivity, detectivity, and other characteristics of the IRFPA were compared before and after irradiation and annealing to summarize the changes of the IRFPA characteristics and to analyze the radiation effect mechanism of IRFPA. The experimental results show that as irradiation dose increases, the dark current decreases, and the responsivity decreases. After annealing at 77K, the degradation of the characteristic parameters caused by irradiation is restored. We believe that the effect of ionizing radiation leads to the decrease of Op-amp gain and threshold voltage drift of MOS, resulting in the degradation of the characteristic parameters.
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