An increase in the aspect ratio of silicon platelets grown by Lateral Diffusion Epitaxy (LDE) is achieved. Epitaxial growth is achieved by a compound graphite slider boat in which an oxidized silicon plate is placed above the seed line on the substrate. The function of the plate is to i) favor side wall growth by limiting vertical nucleation on the platelets, and ii) to enhance the surface smoothness by restricting diffusion of silicon to a horizontal direction. We have studied layer growth from the In-Si liquid phase by reducing the gap between substrate and plate. By reducing the gap, it allows for a more uniform growth of silicon from the side wall of the strip. In addition, we investigate repositioning the silicon seed line to a downward orientation. In this case, the diffusion rate increases due to a gravity effect.
We have studied epitaxial lateral overgrowth of p-type silicon by Liquid Phase Epitaxy (LPE) on n-type (111) silicon
substrates from a Si/In melt. The substrate had a silicon dioxide mask with a set of parallel opening windows for seed
lines which were aligned along a [211]direction. The growth parameters, morphology and electrical properties of the
grown crystal were studied. Two single crystalline silicon strips were formed on one single seed line, one strip on either
side of the seed line, demonstrating that silicon is more likely to deposit near the interface between the silicon and the
oxide. All facets of the strips are {111} planes and therefore the bottom surface has a 4 degree angle with the substrate,
providing convenience for the epitaxial layer to be peeled off from the substrate and used for potential photovoltaic
applications. Monte Carlo random walk model is used to simulate the epitaxial growth of the mono-crystalline strips.
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