Extreme ultraviolet lithography (EUVL) is recognized as a leading technology in next-generation lithography. Achieving spectral purification while ensuring extreme ultraviolet (EUV) reflectance is one of the key technologies for industrializing EUVL. An EUV collector mirror with phase grating can be used in the spectral purification of an EUVL source. However, it also induces a considerable loss of EUV. We propose a deposition model for calculating the multilayer coating profile on the surface of an EUV collector with grating based on a geometric line tracing method. In addition, it also analyzes the coating defects that influence the EUV reflectance, and the evolution of the coating defects with the grating positions. Experimental results reveal that the model accurately predicts the multilayer coating profile deposited on the surface of the collector, which helps improve how EUV collector is deposited.
To explore the potential of achieving low-stress and high-reflectance Mo/Si multilayers deposited by conventional magnetron sputtering with bias assistance, we investigated the effects of varying Ar gas pressure, substrate bias voltage and bias-assisted Si ratio on the stress and EUV reflectance of Mo/Si multilayers. To reduce the damage of ion bombardments on Si-on-Mo interface, only final part of Si layer was deposited with bias assistance. Bias voltage has strong influence on the stress. The compressive stress of Mo/Si multilayers can be reduced remarkably by increasing bias voltage due to the increase of Mo-on-Si interdiffusion and postponement of Mo crystallization transition. Properly choosing gas pressure and bias-assisted Si ratio is critical to obtain high EUV reflectance. Appropriately decreasing gas pressure can reduce the interface roughness without increasing interdiffusion. Too much bias assistance can seriously reduce the optical contrast between Mo and Si layers and lead to a remarkable decrease of EUV reflectance. Thus, by appropriately choosing gas pressure, bias voltage and bias-assisted Si ratio, the stress values of Mo/Si multilayers can be reduced to the order of -100 MPa with an EUV reflectance loss of about 1%.
To meet the requirements of wavelength matching and figure preservation for EUV multilayer optics, study of precise control of the lateral thickness gradients of multilayer was performed. The distribution of the magnetron sputtering source was derived by fitting the coating thickness profiles of flat substrates sweeping across the source with constant velocity at different heights using genetic algorithm. Then, genetic algorithm was also used in finding the proper speed profiles for the desired thickness profiles. By the method mentioned above, extremely precise control of the lateral thickness gradients of multilayer on curved substrates was realized.
The reflectivity of thin film changes periodically with the increase of its thickness. According to this effect, we present a
dual-wavelength method for measuring the thickness of HSQ film. At first, the refractive index of HSQ was measured by
a spectroscopic ellipsometer. Then the relationship between the thickness of HSQ and the reflectivity was deduced. At
last, the thickness of HSQ was calculated using the reflectivity measured by a spectrograph. The method was proved to
be simple and effective.
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