We present the design and demonstration of a unique and novel detector for electron microscopy based on microelectromechanical systems (MEMS) technology. The detector is optimized for transmission electron backscatter diffraction, or more specifically for transmission Kikuchi diffraction, and will allow this new analytic tool to realize its full potential. In addition, this single detector is capable of simultaneous acquisition of bright field and dark field images in scanning electron microscopy and transmission electron microscopy and may replace a number of the single-purpose detectors presently used in these devices.
It is now widely recognized that the intensity and brightness of inverse-Compton x-ray light sources can be enhanced through the use of a high finesse optical storage cavity. But the criteria for the practical use and optimization of such cavities are less well understood. We will review those criteria and their application to the development of an optimized high brightness 5 - 20 keV inverse-Compton x-ray source under development at the University of Hawai`i.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.