Mr. Chao Zhang Profile

Chao Zhang

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Proceedings Article | 14 August 2024 Paper

Graphene/silicon infrared photoelectric detection based on black phosphorus modification

Kai Zhang, Kai Wu, Chao Zhang, Ying Luo, Tong Yu, Zefeng Chen, Cheng Zhang, Xiaofeng Li

Proceedings Volume 13248, 132480L (2024) https://doi.org/10.1117/12.3033270

KEYWORDS: Graphene, Black phosphorus, Silicon, Photodetectors, Infrared radiation, Photocurrent, Heterojunctions, Infrared photography, Electrodes, Infrared detectors

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In recent years, graphene/silicon heterojunction photodetectors have attracted wide attention in the world, and promoted the research and development of related devices. However, the ultra-low light absorption of graphene, coupled with the limitation of the silicon band gap, result in a constrained absorption capacity for infrared light within this category of photodetectors. Although the device performance can be improved by introducing some optical structures such as surface plasmons, optical waveguides, optical microcavities, quantum dots, the preparation process is complex, resulting in high cost and low yield. In this paper, we propose a novel infrared photodetector structure based on graphene/silicon ternary heterojunction modified with black phosphorus. Black phosphorus is used to absorb near-infrared light, generate photogenerated charge carriers, which then injected into graphene to change the Fermi level of graphene, thus changing the Schottky barrier between graphene and silicon, so that the carriers are easier to cross the Schottky barrier and be collected by silicon to generate photocurrent and realize near-infrared photoelectric detection. The experimental results show that compared with the graphene/silicon photodetectors without black phosphorus, in the wavelength range from 1500 nm to 1800 nm, the device responsiveness exceeds 0.1 mA/W, and reaches a maximum value of 0.18 mA/W at 1730 nm.

Proceedings Article | 14 August 2024 Paper

Comparative study of photoconductive and diode MoS2/MoTe2 heterojunction infrared photodetectors

Bining Sheng, Jiong Yang, Chao Zhang, Xiaofeng Li

Proceedings Volume 13248, 1324808 (2024) https://doi.org/10.1117/12.3032718

KEYWORDS: Heterojunctions, Diodes, Monolayers, Photodetectors, Infrared detectors, Photocurrent, Infrared radiation, Molybdenum, Infrared photography, 2D materials

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When two two-dimensional semiconductors stack and form the type-II band alignment van der Waals heterojunction, sub-bandgap photoelectric detection can be realized, thus overcoming the intrinsic bandgap limit on the working wavelength of traditional semiconductor detectors. Therefore, photodetectors based on 2D heterostructures have great potentials and advantages in infrared photoelectric detection. High-performance infrared photodetectors based on two-dimensional transition metal chalcogenide heterojunction have been widely reported. However, the current design of two-dimensional heterojunction photodetectors primarily focused on the diode, which has low carrier utilization efficiency and with no extra gain, rendering poor photo responsivities. In addition, the acquisition of monolayer MoTe₂ is difficult, and there are few researches based on monolayer MoTe₂ heterojunction devices. This work aims at a comparative analysis of photoconductive and diode MoS₂/MoTe₂ heterojunction infrared photodetectors. By assessing the photo response of the photodetectors in both operational modes to the same infrared wavelength, our findings reveal that the photoresponsivity of the two-dimensional heterojunction detector in photoconductive mode reaches 10⁴ nA/W, which is 100 times higher than the diode under the identical conditions. In the photoconductive mode, the inherent photogating effect within the heterojunction engages electrons in the MoS₂ layer in multiple photoconductive processes before recombining with holes in the MoTe₂ layer, significantly enhancing optical gain and consequently improving responsiveness. The superior detection performance of the two-dimensional heterojunction photodetector in photoconductive mode presents a novel approach to addressing the performance limitations of infrared detectors.

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