A low-loss LNOI edge coupler fabricated on 4-inch wafer with deep ultraviolet lithography was demonstrated. The coupler was fabricated on LNOI with 600 nm thin-film lithium-niobate by 180nm lithography and ICP etch process. The 600nm thin-film lithium-niobate was etched for three times to achieve the coupler with tri-layer structure and narrow taper tips of below 150 nm. The fiber to chip coupling loss is 0.84 dB and 1.3 dB per facet for TE light at 1550 nm, when coupled with lensed fibers, which have 4 μm and 3.5 μm mode field diameter, respectively. Furthermore, the coupling loss is less than 1 dB per facet in the wavelength range between 1520 to 1560 nm.
In this paper, we demonstrate a high-Q LNOI microdisk coupling with a silicon nitride (Si3N4) optical waveguide. Its resonance characteristic can be turned by a thermistor on the microdisk resonator. The LNOI microdisk resonator is fabricated by inductively coupled plasma-reactive ion etching (ICP-RIE). Its sidewall is further smoothed by employing chemical mechanical polishing (CMP) to improve the quality factor (Q-factor). The LNOI/Si3N4 heterogeneous integrated resonator shows a Q-factor of 2.58 × 105, and a wavelength tunability of ~14.5 pm/W.
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