Ms. Cheryl Alix Profile

Cheryl Alix

at TEL Technology Ctr America LLC

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 13 June 2022 Presentation

Highly selective isotropic chemical dry etching for gate-all-around devices: nanosheet, forksheet and complementary FETs

Yusuke Muraki, Yusuke Oniki, Pallavi Gowda, Efrain Altamirano-Sánchez, Hans Mertens, Naoto Horiguchi, Frank Holsteyns, Subhadeep Kal, Cheryl Alix, Kaushik Kumar, Aelan Mosden, Trace Hurd, Nobuyuki Takahashi

Proceedings Volume PC12056, PC1205604 (2022) https://doi.org/10.1117/12.2613723

KEYWORDS: Field effect transistors, Etching, Dry etching, Very large scale integration, Isotropic etching, Dielectrics, Gallium arsenide, Transistors, Superlattices, Sodium

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Proceedings Article | 22 February 2021 Presentation + Paper

Scatterometry of nanowire/nanosheet FETs for advanced technology nodes

Madhulika Korde, Subhadeep Kal, Cheryl Alix, Nick Keller, G. Andrew Antonelli, Aelan Mosden, Alain Diebold

Proceedings Volume 11611, 116111S (2021) https://doi.org/10.1117/12.2584751

KEYWORDS: Scatterometry, Field effect transistors, Metrology, Process control, Nanowires, Spectroscopic ellipsometry, Optical lithography, Inspection, Etching, Semiconducting wafers

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Proceedings Article | 24 March 2020 Presentation

Isotropic plasma free Si trim for FinFET to GAA device architectures (Conference Presentation)

Subhadeep Kal, Yusuke Oniki, Cheryl Alix, Karine Kenis, Efrain Altamirano-Sánchez, Naoto Horiguchi, Frank Holsteyns, Yusuke Muraki, Daniel Chanemougame, Aelan Mosden, Kaushik Kumar, Peter Biolsi, Trace Hurd

Proceedings Volume 11329, 113290Q (2020) https://doi.org/10.1117/12.2550539

KEYWORDS: Silicon, Fin field effect transistors, Gallium arsenide, Critical dimension metrology, Plasma, Field effect transistors, Etching, Line edge roughness, Line width roughness, Transistors

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Proceedings Article | 20 March 2020 Paper

X-ray metrology of nanowire/ nanosheet FETs for advanced technology nodes

Madhulika Korde, R. Joseph Kline, Daniel Sunday, Nick Keller, Subhadeep Kal, Cheryl Alix, Aelan Mosden, Alain Diebold

Proceedings Volume 11325, 113250W (2020) https://doi.org/10.1117/12.2553371

KEYWORDS: Field effect transistors, Etching, Diffraction, X-rays, Metrology, Scattering, Data modeling, Critical dimension metrology, X-ray characterization, Nanostructures

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