Single PCSEL devices have been demonstrated to have Watt-class output. Due to the inhomogeneous optical mode distribution, such large-area PCSEL devices may suffer from saturation of lasing efficiency under high biasing conditions when the spatial hole burning, and band distortion effects result in decreased gain to the fundamental mode and increased gain to the high-order modes. On the other hand, it has been a challenging task to achieve coherent beam combining and single-mode emission based on the VCSELs or DFB lasers. PCSEL architecture has stronger in-plane optical coupling control through the evanescent wave leakage between the cavities. In this paper, we present design and simulation of PCSEL arrays with experimental demonstration of single dominant spatial mode profile obtaining output power of 250 mW from 2-by-2 PCSEL arrays under pulsed operation. Our uncooled PCSEL arrays exhibit 0.22 nm linewidth above threshold compared to 0.075 nm for a single 100 µm PCSELs.
We report a selective injection design for GaAs-based Photonic-Crystal Surface-Emitting Lasers (PCSELs). COMSOL and FDTD simulations are carried out to design the injection electrode size to achieve largest gain overlapping factors with optical mode and lowest gain threshold. The PCSEL devices are fabricated with GaAs-based Multiple Quantum Well (MQW) wafer. Devices with surface area of 250×250 μm2 are fabricated with different injection electrode sizes. Testing results show that the best beam properties and an output power of 750 mW were achieved with a 150 μm p-electrode design, demonstrating selective injection impact to PCSEL beam profile.
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