Mr. Chi-Jing Hong-Liao Profile

Chi-Jing Hong-Liao

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 15 October 2012 Paper

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Lin Li, Chi-Jing Hong-Liao, Yi Zhe Huang, Cheng Chen, Shude Yao, Zi Qiu, H. Lin, Ian Ferguson, Zhe Chuan Feng

Proceedings Volume 8484, 84840Y (2012) https://doi.org/10.1117/12.928862

KEYWORDS: Gallium arsenide, Metalorganic chemical vapor deposition, Aluminum, FT-IR spectroscopy, Error analysis, Gallium, Raman spectroscopy, Reflectivity, Luminescence, Light emitting diodes

Read Abstract +

Quaternary III-V compound InAlGaP, especially In0.5(Al_xGa_1-x)0.5P which is lattice matched with GaAs, are important materials for visible red-green light emitting diode (LED) and laser diode (LD), solar cell and other optoelectronic and electronic device applications. A set of In_0.5(Al_xGa_1-x)_0.5P thin films on GaAs substrates with a wide range of x up to ~80%, were grown by low pressure metalorganic chemical vapor deposition (MOCVD) and studied by a variety of nuclear science and optical analytical techniques, including Rutherford Backscattering Spectrometry (RBS), Raman scattering, photoluminescence (PL), Photoreflectance (PR) and FTIR. Temperature dependent PL-PR measurements over 10-300 K presented the band gap of these InAlGaP materials and variations with composition x and temperature (T). RBS was used to measure the microstructure of AlInGaP films, and through simulation, determine the film thickness and composition precisely. RBS measurement and simulation results indicate a quite fuzzy in the two interfaces, i.e. that there exists diffusion in the majority samples, especially between the AlInGaP layer and substrate. For a certain number of incoming He+ ions,we have proposed a way to determine the error bar by RBS successful. For this series of samples, the error bar of content is around ±1.5%. The error bar of thickness is around ±5.0nm. Different InAlGaP films with different composition and thickness may present different error bars. The results illuminate that RBS is a precise tool to analysis the microstructure of quaternary semiconductor AlInGaP/GaAs samples.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years