A new method is demonstrated in this paper for improving the NBTI lifetime on pMOS by >3X for I/O (65A) transistors and >2X for core (20A) transistors by using Chlorine (Cl) contained 1st gate oxidation in an advanced dual gate oxide 0.13um CMOS technology. The improvement appears related to the residual SiCl bonds on the surface of core and I/O transistor areas (from the Cl-contained 1st oxidation). The transistor beta (as measured by Idsat/(Vg-Vt)2 at saturation mode) is improved (~10%) on pMOS and degraded slightly (~3%) on nMOS as an evidence for supporting this mechanism.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.