Photoluminescence enhancement of MoS2 monolayers on TiN thin films grown on sapphire by molecular-beam-epitaxy (MBE) is observed. The PL spectra of MoS2 flakes on MBE-grown 58-nm-thick TiN crystalline film and on reference sapphire substrate are obtained at room temperature using a confocal laser scanning microscope with 405, 445, 488 and 561 nm excitation wavelengths. The maximum PL enhancement for B-exciton (6-fold) and A- trion (15-fold) is obtained at the excitation wavelength 488 nm that matches most closely to the epsilon-near-zero wavelength, 473 nm, of TiN film. A good agreement is observed between measured and calculated enhancements. The enhancement is attributed to increased light absorption when excitation wavelength matches the epsilon-near-zero wavelength of TiN film.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.