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Using rigorous lithographic simulations, we screen potential single element absorber materials for their optical properties and their optimal thickness for minimum best focus variation through pitch at wafer level. In addition, the M3D mitigation by absorber material is evaluated by process window comparison of foundry N5 specific logic clips.
In order to validate the rigorous simulation predictions and to test the processing feasibility of the alternative absorber materials, we have selected the candidate single elements Nickel and Cobalt for an experimental evaluation on wafer substrates. In this work, we present the film characterization as well as first patterning tests of these single element candidate absorber materials.
We present first results on the polarization properties of EUV multilayer mirrors close to the Brewster angle where polarization selectivity up to s104 is predicted from model calculations. We also present polarization resolved measurements of the EUV diffraction of absorber line patterns at EUV photomasks.
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