Prof. Claudine Nì. Allen Profile

Prof. Claudine Nì. Allen

Associate Professor at Univ Laval

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Publications (7)

Proceedings Article | 21 August 2020 Poster + Presentation + Paper

Towards optimal light-matter coupling of colloidal quantum dots in optical fibers

Olivier-Michel Tardif, Arthur Perret, Claudine Allen

Proceedings Volume 11465, 114651D (2020) https://doi.org/10.1117/12.2568888

KEYWORDS: Optical fibers, Quantum dots, Semiconductors, Finite-difference time-domain method, Step index fibers

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Proceedings Article | 22 February 2013 Paper

Flow cytometer system for single-shot biosensing based on whispering gallery modes of fluorescent microspheres

Reno Lessard, Olivier Rousseau-Cyr, Maxime Charlebois, Christophe Riviere, Ozzy Mermut, Claudine Nì. Allen

Proceedings Volume 8600, 86001Q (2013) https://doi.org/10.1117/12.2004676

KEYWORDS: Refractive index, Biosensing, Absorption, Statistical analysis, Biological research, Signal detection, Biosensors, Bacteria, Environmental sensing, Photonics

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Proceedings Article | 8 November 2007 Paper

Nanocrystal coated beads for optical coding and whispering gallery modes

Claudine Nì Allen, Nicolas Lequeux, Christophe Chassenieux, Guillaume Cyr, Gilles Tessier, Benoit Dubertret

Proceedings Volume 6796, 67962Z (2007) https://doi.org/10.1117/12.779084

KEYWORDS: Zinc, Cadmium, Adsorption, Silica, Luminescence, Refractive index, Nanocrystals, Polymers, Magnetism, Sulfur

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Proceedings Article | 1 October 2005 Paper

Characterization of the ultrafast carrier dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.55 µm

Aaron Zilkie, Joachim Meier, Peter Smith, Mohammad Mojahedi, J. Stewart Aitchison, Philip Poole, Claudine Ni. Allen, Pedro Barrios, Daniel Poitras

Proceedings Volume 5971, 59710G (2005) https://doi.org/10.1117/12.629698

KEYWORDS: Picosecond phenomena, Ultrafast phenomena, Absorption, Switching, Quantum dots, Heterodyning, Optical amplifiers, Optical parametric oscillators, Carrier dynamics, Polarization

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Proceedings Article | 15 December 2000 Paper

Quantum dot intermixing with thermal and laser annealing

C. Allen, Jan Dubowski, Paul Piva, Simon Fafard

Proceedings Volume 4087, (2000) https://doi.org/10.1117/12.406366

KEYWORDS: Annealing, Diffusion, Quantum dots, Gallium arsenide, Luminescence, Indium arsenide, Temperature metrology, Nd:YAG lasers, Nanostructures, Photonic devices

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Proceedings Article | 11 July 2000 Paper

Quantum dot devices

Simon Fafard, Hui Liu, Zbigniew Wasilewski, John McCaffrey, M. Spanner, Sylvain Raymond, C. Allen, Karin Hinzer, Jean Lapointe, C. Struby, Ming Gao, Pawel Hawrylak, C. Gould, A. Sachrajda, P. Zawadzki

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392130

KEYWORDS: Quantum dots, Spectroscopy, Gallium arsenide, Semiconductor lasers, Indium arsenide, Transmission electron microscopy, Optical storage, Luminescence, Electrons, Quantum wells

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From a recent study of the growth and optical properties of quantum dots (QD's), we demonstrated that artificial atoms with sharp electronic shells can be fabricated with good control, using self-assembled QD's grown by molecular beam epitaxy. Size and shape engineering of the QD's during growth permits the tailoring of their intersublevel energy spacings. We demonstrate a much improved uniformity of the macroscopic ensembles of QD's, with well-resolved electronic shells. In addition to size and shape engineering of the QDS's in the case of single-layer samples, we demonstrate significant improvements in the uniformity of the vertically self-aligned stacked QD's. State-filling spectroscopy of the zero-dimensional transitions between confined electrons and holes demonstrates that the energy levels are readily tunable. One to five confined levels, with an inter-level energy spacing between 25 and 90 meV, are obtained by adjusting the growth temperature or with post-growth annealings. Such QD's having well-defined excited-states have been grown in the active region of devices and results will be presented for lasers, detectors, or for structures displaying optical memory effects. For example, QD laser diodes with well-defined electronic shells are fabricated, and shape-engineered stacks of self-aligned QD's are used to increase the gain in the active region. Lasing is observed in the upper QD shells for small gain media, and progresses towards the QD ground states for longer cavity lengths. We obtained at 77K thresholds for J_th=15 A/cm² for a 2 mm cavity lasing in the first excited state (p-shell), and at 300K for a 5 mm cavity, J_th is ~430A/cm² with lasing in the d-shell. For an increased QD density, J_th is smaller than 100A/cm² at room temperature. For inter- sublevel transitions, we demonstrated broadband normal incidence detection with responsivity approaching 1A/W at a detection wavelength of 5 microns. For interband detection, the photoluminescence decay time of p-i-n diode can be changed from ~3nsec to ~0.3nsec (3Ghz) with a reverse bias. For Qds capped with less than ~10 nm, remarkable charge transfers between QD and surface states lead to optical memory effects lasting over time-scales of several minutes.

Proceedings Article | 4 December 1998 Paper

Towards quantum dot laser diodes emitting at 1.5 microns

Simon Fafard, John McCaffrey, Yan Feng, C. Allen, Hugues Marchand, L. Isnard, Patrick Desjardins, S. Guillon, Remo Masut

Proceedings Volume 3491, (1998) https://doi.org/10.1117/12.328737

KEYWORDS: Indium arsenide, Heterojunctions, Laser damage threshold, Electroluminescence, Quantum dot lasers, Diodes, Gallium arsenide, Transmission electron microscopy, Semiconductor lasers, Quantum wells

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