We theoretically investigate the propagation of graphene plasmon polaritons in graphene nanoribbon waveguides
and experimentally observe the excitation of the graphene plasmon polaritons in a continuous graphene
monolayer. We show that graphene nanoribbon bends do not induce any additional loss and nanofocusing occurs
in a tapered graphene nanoriboon, and we experimentally demonstrate the excitation of graphene plasmon
polaritonss in a continuous graphene monolayer assisted by a two-dimensional subwavelength silicon grating.
In this paper, we investigate the capacitance tuning of nanoscale split-ring resonators. Based on a simple LC
circuit model (LC-model), we derive an expression where the inductance is proportional to the area while the
capacitance reflects the aspect ratio of the slit. The resonance frequency may be tuned by the slit aspect
ratio leaving the area, the lattice constant Λ, and nearest-neighbor couplings in periodic split-ring resonator
structures invariant. Experimental data as well as numerical simulation data, verify the predictions of the simple
LC-model.
We report on experimental realization of the Fang Ag superlens structure [1] suitable for further processing and
integration in bio-chips by replacing PMMA with a highly chemical resistant cyclo-olefin copolymer, mr-I T85 (Micro
Resist Technology, Berlin, Germany). The superlens was able to resolve 80 nm half-pitch gratings when operating at a
free space wavelength of 365 nm.
Fang et al. used PMMA since it enables the presence of surface plasmons at the PMMA/Ag interface at 365 nm and
because it planarizes the quartz/chrome mask. If the superlens is to be integrated into a device where further processing
is needed involving various organic polar solvents, PMMA cannot be used. We propose to use mr-I T85, which is highly
chemically resistant to acids and polar solvents.
Our superlens stack consists of a quartz/chrome grating mask, a 40 nm layer of mr-I T85, 35 nm Ag, and finally 70 nm
of the negative photoresist mr-UVL 6000 (Micro Resist). A 50 nm layer of aluminium on top of the quartz/chrome mask
reflected all light that did not penetrate through the mask openings thereby reducing waveguiding in the top resist layer.
The exposures took place in a UV-aligner at 365 nm corresponding to the excitation wavelength of the surface plasmons
at the mr-I T85/Ag interface. Supporting COMSOL simulations illustrate the field intensity distribution inside the resist
as well as the presence of surface plasmons at the mr-I T85/Ag boundary. AFM scans of the exposed structure revealed
80 nm gratings.
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