Adhesive wafer bonding is a technique that uses an intermediate layer for bonding (typically a polymer). The main
advantages of using this approach are: low temperature processing (maximum temperatures below 400°C), surface
planarization and tolerance to particles (the intermediate layer can incorporate particles with the diameter in the layer
thickness range). Evaporated glass, polymers, spin-on glasses, resists and polyimides are some of the materials suitable
for use as intermediate layers for bonding. The main properties of the dielectric materials required for a large field of
versatile applications/designs can be summarized as: isotropic dielectric constants, good thermal stability, low CTE and
Young's modulus, and a good adhesion to different substrates.
This paper reports on wafer-to-wafer adhesive bonding using SINR polymer materials. Substrate coating process as well
as wafer bonding process parameters optimization was studied. Wafer bonds exceeding the yield strength of the SINR
polymer were accomplished on 150 mm Si wafers. Features of as low as 15 μm were successfully resolved and bonded.
A unique megasonic-enhanced development process of the patterned film using low cost solvent was established and
proven to exceed standard development method performance. Statistical analysis methods were used to show
repeatability and reliability of coating processes.
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