This presentation will discuss recent studies on the fabrication and characterization of b-Ga2O3 containing Ge donors or N acceptors. A plasma source was used to dope Ga2O3 nanowires with N by exploiting their nanoscale cross sections, while bulk crystals were uniformly doped with Ge by neutron irradiation. The dopant incorporation was confirmed by chemical analyses. We find defect-related luminescence is strongly enhanced in N-doped Ga2O3, which likely originates from defect compensation effects. With Ge doping, both the UV band due to self-trapped holes (STHs) and defect-related emission increase following neutron irradiation, suggesting STHs being localized close to a defect site.
Monoclinic β-Ga2O3 nanowires were fabricated using chemical vapor deposition and doped with nitrogen using remote plasma. The monoclinic phase and high crystallinity of the nanowires were confirmed by XRD and TEM, while nitrogen incorporation into the nanowires was confirmed by X-ray absorption and Raman spectroscopies. Temperature-resolved cathodoluminescence characterisation revealed a green luminescence band at 2.5 eV due to the N incorporation. The UV emission at 3.4 eV associated with self-trapped holes and its temperature-dependant behaviour were found to be identical for the undoped and N-doped nanowires. The experimental findings will be discussed in context of theoretical calculations for N-doped Ga2O3.
We report the characteristics of luminescence bands in beta-Ga2O3 thin films and single crystals. The dominant UV emission at 3.4 eV exhibits strong thermal quenching but its peak shape remains unchanged. The blue and green bands, attributed to defects, are found to be strongly dependent on growth conditions. Additionally, we observe a distinct red luminescence at 1.9 eV upon hydrogen doping. The emergence of this emission is accompanied by substantially increased electrical conductivity. The red emission is shown to be consistent with shallow donor–deep acceptor pair recombination and will be discussed in the context of defect models.
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