Mr. Daisuke Kawana Profile

Daisuke Kawana

at Tokyo Ohka Kogyo America Inc

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 25 May 2022 Presentation + Paper

State of polymer chains in alkaline developer studied by dynamic light scattering

Naoki Tanaka, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro, Daisuke Kawana

Proceedings Volume 12055, 120550J (2022) https://doi.org/10.1117/12.2614138

KEYWORDS: Polymer thin films, Dynamic light scattering

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Proceedings Article | 22 February 2021 Poster + Presentation + Paper

Analysis of dissolution kinetics of poly(4-hydroxystyrene) with different molecular weight distributions in alkaline aqueous solution using machine learning

Naoki Tanaka, Kyoko Watanabe, Kyoko Matsuoka, Kazuki Azumagawa, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro, Daisuke Kawana

Proceedings Volume 11612, 116120R (2021) https://doi.org/10.1117/12.2584067

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Proceedings Article | 20 September 2020 Presentation

Study on dependence of transient swelling layer formation on molecular weight and dispersion of backbone polymer of chemically amplified EUV resists

Takahiro Kozawa, Kyoko Watanabe, Kyoko Matsuoka, Naoki Tanaka, Kazuki Azumagawa, Takuya Ikeda, Yoshitaka Komuro, Daisuke Kawana

Proceedings Volume 11517, 115170G (2020) https://doi.org/10.1117/12.2574877

KEYWORDS: Polymers, Stochastic processes, Dispersion, Extreme ultraviolet, Line edge roughness, Molecules, Photons, Bridges, Chemical reactions, Diffusion

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Proceedings Article | 31 May 2019 Paper

Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists

Ayako Nakajima, Kyoko Watanabe, Kyoko Matsuoka, Takahiro Kozawa, Yoshitaka Komuro, Daisuke Kawana, Akiyoshi Yamazaki

Proceedings Volume 10957, 109571R (2019) https://doi.org/10.1117/12.2514938

KEYWORDS: Polymers, Molecules, Quartz, Crystals, Polymer thin films, Extreme ultraviolet lithography, Diffusion, Complex systems, Chemically amplified resists, Lithography

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Proceedings Article | 18 March 2016 Paper

Patterning performance of chemically amplified resist in EUV lithography

Tatsuya Fujii, Shogo Matsumaru, Tomotaka Yamada, Yoshitaka Komuro, Daisuke Kawana, Katsumi Ohmori

Proceedings Volume 9776, 97760Y (2016) https://doi.org/10.1117/12.2218417

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Lithography, Diffusion, Extreme ultraviolet, Polymers, Chemically amplified resists, High volume manufacturing, Semiconductor manufacturing, Semiconductors, Quantum efficiency, Electrons, Semiconducting wafers

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Proceedings Article | 20 March 2015 Paper

Development of EUV chemically amplified resist which has novel protecting group

Shogo Matsumaru, Tatsuya Fujii, Takashi Kamizono, Kenta Suzuki, Hiroto Yamazaki, Masatoshi Arai, Yoshitaka Komuro, Akiya Kawaue, Daisuke Kawana, Taku Hirayama, Katsumi Ohmori

Proceedings Volume 9425, 94250U (2015) https://doi.org/10.1117/12.2087197

KEYWORDS: Polymers, Extreme ultraviolet, Quantum efficiency, Lithography, Extreme ultraviolet lithography, Semiconducting wafers, Chemically amplified resists, High volume manufacturing, Polymer thin films, Diffusion

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Proceedings Article | 11 April 2007 Paper

Progress of hard mask material for multi-layer stack application

Hisanobu Harada, Koji Yonemura, Takeshi Tanaka, Daisuke Kawana, Naoki Yamashita, Katsumi Ohmori

Proceedings Volume 6519, 65190N (2007) https://doi.org/10.1117/12.711941

KEYWORDS: Etching, Polymers, Photomasks, Line width roughness, Reflectivity, Silicon, Carbon, Resistance, Dry etching, Reflection

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Proceedings Article | 24 March 2006 Paper

Tri-layer resists process for fabricating 45-nm L&S patterns by EPL

Fumihiro Koba, Kazuyuki Matsumaro, Eiichi Soda, Tadayoshi Watanabe, Yoshihisa Matsubara, Hiroshi Arimoto, Tasuku Matsumiya, Daisuke Kawana, Naoki Yamashita, Yasushi Fujii, Katsumi Ohmori, Mitsuru Sato, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6151, 615127 (2006) https://doi.org/10.1117/12.655976

KEYWORDS: Photoresist processing, Failure analysis, Etching, Back end of line, Semiconducting wafers, Critical dimension metrology, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Photomasks

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In this study, we have demonstrated a resist process to fabricate sub 45-nm lines and spaces (L&S) patterns (1:1) by using electron projection lithography (EPL) for a back-end-of-line (BEOL) process for 45-nm technology node. As a starting point we tried to fabricate sub 45-nm L&S (1:1) patterns using a conventional EPL single-layer resist process. There, the resolution of the EPL resist patterns turned out to be limited to 70 nm L&S (1:1) with aspect ratio (AR) of 3.3 which was caused by pattern collapse during the drying step in resist develop process. It has been common knowledge that pattern collapse of this type could be prevented by reducing the surface tension of the rinse-liquid and by decreasing the AR of the resist patterns. Therefore, we first applied a surfactant rinse to a single-layer resist process that could control the pattern collapse by its reduced surface tension. In this experiment, we used the ArF resist instead of the EPL resist because the surfactant that we were able to obtain was the one optimized to the ArF resist materials. From the results of ArF resist experiments, it was guessed that it was difficult for the EPL resist to obtain the L&S patterns with AR of 3.5 or more even if we used the surfactant optimized to the EPL resist. And we found that it was considerably difficult to form 45-nm L&S patterns with AR of 5.1 that was our target. Next, we evaluated a EPL tri-layer resist process to prevent pattern collapse by decreasing the AR of the resist patterns. Because in a tri-layer resist process the purpose of the top-layer resist is to transfer pattern to the middle-layer, a thinner top-layer resist was selected. By using the tri-layer resist process we were able to control the resist pattern collapse and thus were successful in achieving 40-nm L/S (1:1) top-layer resist patterns with AR of 2.3. The process also gave us 40-nm L&S (1:1) patterns after low-k film etching. And moreover, using our tri-layer resist process we were able to fabricate a wiring device with Cu/low-k. Although it was our first attempt, the process resulted in a high yield of 70 % for a 60-nm (1:1) wiring device. As a part of our study we conducted failure analysis of the results of our experiment. We found that the failures were located at the edge of the wafer and might originate in the bottom-layer pattern collapse. We thought that the wiring yield could be increased by control the bottom-layer pattern collapse. These findings indicated that our tri-layer resist process had a high applicability for device fabrication in BEOL.

Showing 5 of 8 publications

Conference Committee Involvement (4)

International Conference on Extreme Ultraviolet Lithography 2024

30 September 2024 | Monterey, California, United States

International Conference on Extreme Ultraviolet Lithography 2023

2 October 2023 | Monterey, California, United States

International Conference on Extreme Ultraviolet Lithography 2022

26 September 2022 | Monterey, California, United States

International Conference on Extreme Ultraviolet Lithography 2021

27 September 2021 | Online Only, United States

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